SIA814DJ-T1-GE3 Vishay, SIA814DJ-T1-GE3 Datasheet - Page 8

• Manufacturer Part Number: SIA814DJ-T1-GE3
• Description: MOSFET N-CH 30V 4.5A SC70-6
• Manufacturer: Vishay

Specifications of SIA814DJ-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 61 mOhm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 10V
• Power - Max: 6.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-70-6 Dual
• Transistor Polarity: N Channel + Schottky Diode
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 110mohm
• Rds(on) Test Voltage Vgs: 12V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SIA814DJ-T1-GE3TR

SiA814DJ
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS T
www.vishay.com
8
10
10
10
10
10
100
10
-2
-3
-4
-5
-1
1
- 50
Reverse Current vs. Junction Temperature
- 25
T
0
J
- Junction Temperature (°C)
V
R
25
= 30 V
50
V
R
250
200
150
100
= 10 V
75
50
0
0
100
5
125
V
DS
New Product
- Drain-to-Source Voltage (V)
150
10
Capacitance
A
= 25 °C, unless otherwise noted
15
20
0.1
10
1
0.0
25
T
J
0.1
= 150 °C
30
0.2
V
Forward Voltage Drop
F
0.3
- Forward Voltage Drop (V)
0.4
T
J
= 25 °C
0.5
S-81176-Rev. A, 26-May-08
Document Number: 68672
0.6
0.7
0.8
0.9
1.0