IRFL214TRPBF Vishay, IRFL214TRPBF Datasheet

MOSFET N-CH 250V 790MA SOT223

IRFL214TRPBF

Manufacturer Part Number
IRFL214TRPBF
Description
MOSFET N-CH 250V 790MA SOT223
Manufacturer
Vishay
Datasheets

Specifications of IRFL214TRPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 470mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
790mA
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.2nC @ 10V
Input Capacitance (ciss) @ Vds
140pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
2 Ohm @ 10 V
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.79 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
790mA
Drain Source Voltage Vds
250V
On Resistance Rds(on)
2ohm
Rds(on) Test Voltage Vgs
10V
Leaded Process Compatible
Yes
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IRFL214PBFTR
IRFL214TRPBF
IRFL214TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRFL214TRPBF
Manufacturer:
IR
Quantity:
11 560
Price:
Note
a. See device orientation.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91194
S10-1257-Rev. C, 31-May-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
DS
DS(on)
g
gs
gd
(Max.) (nC)
(nC)
(V)
(nC)
(Ω)
D
SOT-223
G
D
a
S
a
a
b
V
GS
e
= 10 V
G
N-Channel MOSFET
e
Single
250
8.2
1.8
4.5
SOT-223
SiHFL214-GE3
IRFL214PbF
SiHFL214-E3
IRFL214
SiHFL214
C
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
V
2.0
GS
at 10 V
T
T
C
A
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performace
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
Definition
SYMBOL
V
V
E
E
I
I
P
device
DM
I
AR
GS
DS
AS
AR
D
D
SOT-223
SiHFL214TR-GE3
IRFL214TRPbF
SiHFL214T-E3
IRFL214TR
SiHFL214T
design,
IRFL214, SiHFL214
a
a
LIMIT
0.025
0.017
± 20
0.79
0.50
0.79
0.31
a
250
6.3
3.1
2.0
a
50
low
a
Vishay Siliconix
on-resistance
www.vishay.com
UNIT
W/°C
mJ
mJ
W
V
A
A
and
1

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IRFL214TRPBF Summary of contents

Page 1

... SOT-223 SiHFL214-GE3 IRFL214PbF SiHFL214-E3 IRFL214 SiHFL214 = 25 °C, unless otherwise noted ° 100 ° ° °C A IRFL214, SiHFL214 Vishay Siliconix device design, low on-resistance SOT-223 a SiHFL214TR-GE3 a IRFL214TRPbF a SiHFL214T-E3 a IRFL214TR a SiHFL214T SYMBOL LIMIT V 250 DS V ± 0. 0.50 I 6.3 DM 0.025 0.017 0. 0. ...

Page 2

... IRFL214, SiHFL214 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (T PARAMETER c Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11 starting ° 128 mH ≤ 2.7 A, dI/dt ≤ 65 A/μs, V ≤ ...

Page 3

... I S showing the integral reverse junction diode ° 0. ° 2.7 A, dI/dt = 100 A/μ Intrinsic turn-on time is negligible (turn-on is dominated Fig Normalized On-Resistance vs. Temperature IRFL214, SiHFL214 Vishay Siliconix MIN. TYP. MAX 190 390 b - 0.64 1.3 and L S Fig Typical Transfer Characteristics www ...

Page 4

... IRFL214, SiHFL214 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91194 S10-1257-Rev. C, 31-May-10 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91194 S10-1257-Rev. C, 31-May-10 IRFL214, SiHFL214 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off) f Fig. 10b - Switching Time Waveforms www ...

Page 6

... IRFL214, SiHFL214 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...

Page 7

... Re-applied voltage Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91194. ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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