RFD14N05 Fairchild Semiconductor, RFD14N05 Datasheet - Page 6

• Manufacturer Part Number: RFD14N05
• Description: MOSFET N-CH 50V 14A I-PAK
• Manufacturer: Fairchild Semiconductor

Specifications of RFD14N05

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 20V
• Input Capacitance (ciss) @ Vds: 570pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Power Dissipation: 48 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Test Circuits and Waveforms
I
G(REF)
FIGURE 18. GATE CHARGE TEST CIRCUIT
V
GS
V
DS
DUT
R
(Continued)
L
+
-
V
DD
I
V
G(REF)
0
0
DD
V
GS
V
= 2V
GS
FIGURE 19. GATE CHARGE WAVEFORMS
Q
g(TH)
Q
V
g(10)
DS
RFD14N05, RFD14N05SM, RFP14N05 Rev. B
Q
g(TOT)
V
GS
= 10V
V
GS
= 20V