IRFR9020TRPBF Vishay, IRFR9020TRPBF Datasheet - Page 7

MOSFET P-CH 50V 9.9A DPAK

IRFR9020TRPBF

Manufacturer Part Number
IRFR9020TRPBF
Description
MOSFET P-CH 50V 9.9A DPAK
Manufacturer
Vishay
Datasheets

Specifications of IRFR9020TRPBF

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 5.7A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
9.9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
490pF @ 25V
Power - Max
42W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.28 Ohm @ 10 V
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9.9 A
Power Dissipation
42000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-9.9A
Drain Source Voltage Vds
-50V
On Resistance Rds(on)
280mohm
Rds(on) Test Voltage Vgs
-10V
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IRFR9020PBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR9020TRPBF
Manufacturer:
VISHAY
Quantity:
4 000
Part Number:
IRFR9020TRPBF
Manufacturer:
IR
Quantity:
20 000
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?90335.
Document Number: 90335
S10-1122-Rev. B, 10-May-10
Re-applied
voltage
Reverse
recovery
current
+
R
-
g
D.U.T.
Note
a. V
Driver gate drive
D.U.T. l
D.U.T. V
Inductor current
GS
= 5 V for logic level devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
IRFR020, IRFU020, SiHFR020, SiHFU020
Body diode forward
-
+
Fig. 14 - For N-Channel
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - device under test
Diode recovery
SD
current
controlled by duty factor “D”
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
D =
-
g
Period
P.W.
+
V
I
V
SD
GS
DD
= 10 V
+
-
V
DD
a
Vishay Siliconix
www.vishay.com
7

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