SI7802DN-T1-E3 Vishay, SI7802DN-T1-E3 Datasheet

MOSFET N-CH 250V 1.24A 1212-8

SI7802DN-T1-E3

Manufacturer Part Number
SI7802DN-T1-E3
Description
MOSFET N-CH 250V 1.24A 1212-8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI7802DN-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
435 mOhm @ 1.95A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
1.24A
Vgs(th) (max) @ Id
3.6V @ 250µA
Gate Charge (qg) @ Vgs
21nC @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.435 Ohm @ 10 V
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.24 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
19.5A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
445mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
3.6V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7802DN-T1-E3TR
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73133
S-83050-Rev. D, 29-Dec-08
Ordering Information: Si7802DN-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
250
8
(V)
3.30 mm
D
7
D
6
PowerPAK
D
Si7802DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
5
Bottom View
0.435 at V
D
0.445 at V
R
®
DS(on)
1
J
a
1212-8
= 150 °C)
S
a
GS
GS
2
(Ω)
S
= 10 V
N-Channel 250-V (D-S) MOSFET
= 6 V
3
S
a
3.30 mm
4
G
a
b, c
A
I
= 25 °C, unless otherwise noted
D
1.95
1.9
Steady State
Steady State
(A)
L = 0.1 mH
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• PWM-Optimized TrenchFET
• Avalanche Tested
• 100 % R
• Primary Side Switch
• Small DC/DC Circuits
• Single-Ended Primary Switching Circuits
Symbol
Symbol
T
R
R
Available
J
V
V
E
I
I
P
, T
DM
I
I
AS
thJA
thJC
GS
DS
AS
D
S
D
stg
g
Tested
Typical
G
10 s
1.95
1.56
3.2
3.8
2.0
1.9
26
65
N-Channel MOSFET
- 55 to 150
± 20
250
260
2.5
0.3
8
D
S
Steady State
®
Maximum
Power MOSFET
1.24
0.99
1.3
1.5
0.8
2.4
33
81
Vishay Siliconix
Si7802DN
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

Related parts for SI7802DN-T1-E3

SI7802DN-T1-E3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7802DN-T1-E3 (Lead (Pb)-free) Si7802DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Avalanche Current Single Avalanche Energy a Maximum Power Dissipation ...

Page 2

... Si7802DN Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73133 S-83050-Rev. D, 29-Dec- 150 ° °C J 0.8 1.0 1.2 Si7802DN Vishay Siliconix 800 700 C iss 600 500 400 300 200 C oss C rss 100 Drain-to-Source Voltage (V) DS Capacitance 2.5 ...

Page 4

... Si7802DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.8 0.6 0 250 µA D 0.2 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 1 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 10 Limited by R ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73133. Document Number: 73133 S-83050-Rev. D, 29-Dec- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7802DN Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords