SUM18N25-165-E3 Vishay, SUM18N25-165-E3 Datasheet

MOSFET N-CH 250V 18A D2PAK

SUM18N25-165-E3

Manufacturer Part Number
SUM18N25-165-E3
Description
MOSFET N-CH 250V 18A D2PAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SUM18N25-165-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
165 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1950pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.165 Ohm @ 10 V
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
18A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
165mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUM18N25-165-E3
SUM18N25-165-E3TR
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
Document Number: 72849
S-80272-Rev. B, 11-Feb-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
V
(BR)DSS
Ordering Information:
250
(V)
TO-263
G
Top View
0.165 at V
D
SUM18N25-165-E3 (Lead (Pb)-free)
N-Channel 250-V (D-S) 175 °C MOSFET
J
a
r
S
DS(on)
= 175 °C)
a
GS
(Ω)
= 10 V
C
= 25 °C, unless otherwise noted
PCB Mount (TO-263)
I
D
18
(A)
T
T
L = 0.1 mH
T
T
C
A
C
C
= 125 °C
= 25 °C
= 25 °C
= 25 °C
c
FEATURES
• TrenchFET
• 175 °C Junction Temperature
• Low Thermal Resistance Package
G
c
N-Channel MOSFET
Symbol
Symbol
T
R
R
J
D
S
V
V
E
I
I
P
, T
DM
I
AS
thJA
thJC
GS
DS
AS
D
D
®
stg
Power MOSFET
- 55 to 175
SUM18N25-165
Limit
Limit
150
± 20
10.4
1.25
3.75
250
1.0
18
20
40
5
b
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
RoHS
V
A
COMPLIANT
1

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SUM18N25-165-E3 Summary of contents

Page 1

... DS(on) 0.165 250 GS TO-263 Top View Ordering Information: SUM18N25-165-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Single Pulse Avalanche Current a Single Pulse Avalanche Energy a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SUM18N25-165 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... C rss C oss Drain-to-Source Voltage (V) DS Capacitance Document Number: 72849 S-80272-Rev. B, 11-Feb- ° °C 125 ° iss 120 160 200 SUM18N25-165 Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 0.32 0.28 0.24 0.20 0. 0.12 0.08 0.04 0. ...

Page 4

... SUM18N25-165 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 2.4 2.0 1.6 1.2 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 100 0 150 ° 0.01 0.000001 0.00001 0.0001 t (s) in Avalanche Current vs. Time www.vishay.com 4 100 125 150 175 = 25 °C A 0.001 0.01 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72849. Document Number: 72849 S-80272-Rev. B, 11-Feb-08 100 10 1 0.1 125 150 175 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUM18N25-165 Vishay Siliconix Limited by r DS(on °C C Single Pulse 0 100 V - Drain-to-Source Voltage ( minimum V at which r ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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