IRFD214PBF Vishay, IRFD214PBF Datasheet
IRFD214PBF
Specifications of IRFD214PBF
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IRFD214PBF Summary of contents
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... The 4 pin DIP package is a low cost machine-insertable S case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain servers as a N-Channel MOSFET thermal link to the mounting surface for power dissipation levels HVMDIP IRFD214PbF SiHFD214-E3 IRFD214 SiHFD214 = 25 °C, unless otherwise noted °C ...
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... IRFD214, SiHFD214 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance ...
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... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted Fig Typical Output Characteristics Fig Typical Output Characteristics, T Document Number: 91130 S10-2462-Rev. C, 08-Nov- ° ° 150 °C = 150 °C A IRFD214, SiHFD214 Vishay Siliconix Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature www.vishay.com 3 ...
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... IRFD214, SiHFD214 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage ° 150 °C J SINGLE PULSE Fig Maximum Safe Operating Area Document Number: 91130 S10-2462-Rev. C, 08-Nov-10 ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Document Number: 91130 S10-2462-Rev. C, 08-Nov- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms t , Rectangular Pulse Duration (s) 1 IRFD214, SiHFD214 Vishay Siliconix D.U. d(on) r d(off) f www ...
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... IRFD214, SiHFD214 Vishay Siliconix Vary t to obtain p required I AS D.U 0. Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...
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... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91130. Document Number: 91130 S10-2462-Rev ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...