FDPF33N25T Fairchild Semiconductor, FDPF33N25T Datasheet - Page 2

• Manufacturer Part Number: FDPF33N25T
• Description: MOSFET N-CH 250V 33A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF33N25T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 94 mOhm @ 16.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 48nC @ 10V
• Input Capacitance (ciss) @ Vds: 2135pF @ 25V
• Power - Max: 37W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 94mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.077 Ohms
• Forward Transconductance Gfs (max / Min): 26.6 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 37 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP33N25 / FDPF33N25 Rev. B
Package Marking and Ordering Information
Electrical Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.35mH, I
3. I
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Off Characteristics
BV
ΔBV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
d(on)
d(off)
f
DSS
GSSF
GSSR
r
S
SM
rr
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
ΔT
≤ 33A, di/dt ≤ 200A/μs, V
FDPF33N25
DSS
FDP33N25
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 33A, V
DD
= 50V, R
DD
≤ BV
Parameter
FDPF33N25
FDP33N25
Device
DSS
G
= 25Ω, Starting T
, Starting T
J
= 25°C
T
C
J
= 25°C unless otherwise noted
= 25°C
Package
TO-220F
TO-220
V
I
V
V
V
V
V
V
V
V
f = 1.0MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
G
DS
GS
GS
GS
F
= 250μA, Referenced to 25°C
/dt =100A/μs
= 25Ω
= 250V, V
= 200V, T
= V
= 40V, I
= 25V, V
= 200V, I
= 0V, I
= 30V, V
= -30V, V
= 10V, I
= 125V, I
= 10V
= 0V, I
= 0V, I
GS
2
, I
D
S
S
D
D
D
Conditions
= 250μA, T
= 33A
= 33A
DS
GS
D
D
DS
= 16.5A
C
= 16.5A
GS
= 250μA
= 33A
= 33A
Reel Size
= 125°C
= 0V
= 0V,
= 0V
= 0V
-
-
J
= 25°C
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
Min
250
-
-
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.077
Typ
1640
0.25
26.6
36.8
1.71
330
230
120
220
39
35
75
10
17
--
--
--
--
--
--
--
--
--
Quantity
0.094
Max Units
2135
-100
www.fairchildsemi.com
100
430
470
160
250
132
5.0
1.4
10
59
80
48
33
--
--
--
--
--
--
--
1
50
50
V/°C
nC
nC
nC
μC
μA
μA
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
A
A
V