FDPF33N25T Fairchild Semiconductor, FDPF33N25T Datasheet - Page 3

• Manufacturer Part Number: FDPF33N25T
• Description: MOSFET N-CH 250V 33A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF33N25T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 94 mOhm @ 16.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 48nC @ 10V
• Input Capacitance (ciss) @ Vds: 2135pF @ 25V
• Power - Max: 37W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 94mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.077 Ohms
• Forward Transconductance Gfs (max / Min): 26.6 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 37 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP33N25 / FDPF33N25 Rev. B
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
10
10
10
2
1
0
10
0.25
0.20
0.15
0.10
0.05
0.00
-1
4000
3000
2000
1000
Top :
Bottom : 5.5 V
Drain Current and Gate Voltage
0
0
10
-1
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
20
V
C
C
C
DS
iss
oss
rss
, Drain-Source Voltage [V]
V
10
DS
0
, Drain-Source Voltage [V]
I
D
, Drain Current [A]
10
40
0
V
GS
= 10V
60
C
C
C
iss
oss
rss
10
V
= C
= C
= C
* Notes :
1
GS
10
* Note : T
1. 250
2. T
gs
gd
ds
= 20V
1
+ C
+ C
C
80
= 25
gd
μ
gd
s Pulse Test
(C
* Note :
J
o
= 25
1. V
2. f = 1 MHz
ds
C
= shorted)
GS
o
C
= 0 V
100
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
12
10
10
10
10
10
10
10
8
6
4
2
0
0
2
1
0
2
1
0
0.2
2
Variation vs. Source Current
and Temperatue
0.4
150
25
o
o
C
4
C
10
150
Q
0.6
V
V
G
SD
GS
, Total Gate Charge [nC]
o
C
, Source-Drain voltage [V]
, Gate-Source Voltage [V]
25
V
V
V
6
o
0.8
DS
DS
DS
C
= 200V
= 50V
= 125V
20
-55
o
C
1.0
8
* Note : I
30
1.2
* Notes :
1. V
2. 250
* Notes :
1. V
2. 250
GS
D
μ
DS
= 0V
= 33A
10
s Pulse Test
μ
= 40V
s Pulse Test
1.4
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40
1.6
12