FDPF12N50FT Fairchild Semiconductor, FDPF12N50FT Datasheet - Page 2

• Manufacturer Part Number: FDPF12N50FT
• Description: MOSFET N-CH 500V 11.5A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF12N50FT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 700 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1395pF @ 25V
• Power - Max: 42W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.7 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11.5 A
• Power Dissipation: 42000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP12N50F / FDPF12N50FT Rev. A1
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6.9mH, I
3. I
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
BV
∆BV
/
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
DS(on)
iss
oss
rss
SD
g(tot)
gs
gd
rr
SD
Device Marking
Symbol
DSS
FDPF12N50FT
∆T
≤ 11.5A, di/dt ≤ 200A/µs, V
DSS
FDP12N50F
J
AS
= 11.5A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
FDPF12N50FT
≤ BV
FDP12N50F
G
DSS
Device
= 25Ω, Starting T
Parameter
, Starting T
J
= 25°C
J
= 25°C
Package
TO-220F
TO-220
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
R
D
D
DS
DS
GS
GS
GS
DS
DD
GS
GS
DS
DS
GS
G
F
= 250µA, V
= 250µA, Referenced to 25
/dt = 100A/µs
= 25Ω
= 500V, V
= 400V, T
= 0V, I
= ±30V, V
= 0V, I
= V
= 10V, I
= 40V, I
= 25V, V
= 400V, I
= 10V
= 250V, I
DS
T
Test Conditions
C
, I
2
SD
SD
D
Reel Size
D
= 25
D
GS
GS
D
D
= 11.5A
= 6A
= 11.5A
GS
C
= 6A
DS
= 250µA
= 11.5A
= 11.5A
= 125
= 0V
= 0V, T
o
-
-
= 0V
= 0V
C unless otherwise noted
o
C
J
= 25
(Note 4, 5)
(Note 4, 5)
o
(Note 4)
(Note 4)
o
C
C
Tape Width
-
-
Min.
500
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1050
Typ.
0.37
0.59
134
135
0.5
21
45
50
35
12
11
21
6
9
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
±100
1395
11.5
100
100
180
110
5.0
0.7
1.5
10
17
30
50
80
46
50
50
-
-
-
-
-
-
-
Units
V/
pF
pF
pF
nC
nC
nC
µA
nA
ns
ns
ns
ns
ns
µC
Ω
V
V
S
A
A
V
o
C