IRFD310PBF Vishay, IRFD310PBF Datasheet - Page 2

• Manufacturer Part Number: IRFD310PBF
• Description: MOSFET N-CH 400V 350MA 4-DIP
• Manufacturer: Vishay

Specifications of IRFD310PBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 Ohm @ 210mA, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 350mA
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 3.6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.35 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 350mA
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 3.6ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFD310PBF

IRFD310, SiHFD310
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
R
V
t
t
C
I
I
C
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
L
t
L
SM
t
I
t
t
on
DS
oss
SD
thJA
iss
rss
S
gs
gd
rr
fs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
J
GS
GS
V
T
R
= 25 °C, I
DS
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
g
Reference to 25 °C, I
= 10 V
= 10 V
= 25 °C, I
= 24 , R
= 320 V, V
V
V
V
V
f = 1.0 MHz, see fig. 5
V
TYP.
TEST CONDITIONS
DD
DS
DS
GS
DS
-
= 200 V, I
F
= 400 V, V
= V
= 0 V, I
V
= 50 V, I
= 2.0 A, dI/dt = 100 A/μs
V
V
GS
S
DS
D
GS
GS
I
GS
= 0.35 A, V
D
= 95 , see fig. 10
= ± 20 V
= 25 V,
, I
= 2.0 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
D
D
D
= 250 μA
I
D
= 250 μA
D
GS
= 1.2 A
= 2.0 A,
= 0.21 A
D
= 0 V
J
= 1 mA
GS
DS
= 125 °C
G
G
= 0 V
= 320 V,
b
MAX.
D
S
b
b
b
120
D
S
b
MIN.
400
2.0
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-2463-Rev. C, 08-Nov-10
Document Number: 91133
TYP.
0.47
0.85
170
240
6.3
8.0
9.9
4.0
6.0
34
21
11
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.35
250
540
4.0
3.6
3.4
8.5
2.8
1.6
1.6
S
25
17
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
nH
μC
nA
μA
pF
ns
ns

S
A
V
V
V