IRLD110PBF Vishay, IRLD110PBF Datasheet - Page 6

MOSFET N-CH 100V 1A 4-DIP

IRLD110PBF

Manufacturer Part Number
IRLD110PBF
Description
MOSFET N-CH 100V 1A 4-DIP
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets

Specifications of IRLD110PBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
540 mOhm @ 600mA, 5V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
6.1nC @ 5V
Input Capacitance (ciss) @ Vds
250pF @ 25V
Power - Max
1.3W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
0.54 Ohm @ 5 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
1 A
Power Dissipation
1300 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Continuous Drain Current Id
1A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
540mohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
2V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.54Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±10V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
4
Package Type
HexDIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRLD110PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLD110PBF
Manufacturer:
IR
Quantity:
15 000
Part Number:
IRLD110PBF
Manufacturer:
Cypress
Quantity:
120
Company:
Part Number:
IRLD110PBF
Quantity:
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IRLD110, SiHLD110
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
V
Fig. 13a - Basic Gate Charge Waveform
AS
GS
V
G
R
10 V
g
Q
GS
V
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T
0.01 W
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
12 V
DS
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S10-2465-Rev. C, 08-Nov-10
Document Number: 91309
D.U.T.
V
I
D
DS
+
-
V
V
DD
DS

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