IRF614SPBF Vishay, IRF614SPBF Datasheet

MOSFET N-CH 250V 2.7A D2PAK

IRF614SPBF

Manufacturer Part Number
IRF614SPBF
Description
MOSFET N-CH 250V 2.7A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF614SPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 1.6A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.2nC @ 10V
Input Capacitance (ciss) @ Vds
140pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
2.7A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
2ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
2 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.7 A
Power Dissipation
3.1 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91026
S-82997-Rev. A, 12-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
G D
(nC)
(nC)
(V)
≤ 2.7 A, dI/dt ≤ 65 A/µs, V
= 50 V, starting T
D
(Ω)
S
2
PAK (TO-263)
a
a
J
= 25 °C, L = 13 mH, R
c
a
DD
b
V
≤ V
GS
D
IRF614SPbF
SiHF614S-E3
IRF614S
SiHF614S
e
= 10 V
DS
2
G
PAK (TO-263)
, T
N-Channel MOSFET
J
e
Single
≤ 150 °C.
250
8.2
1.8
4.5
G
= 25 Ω, I
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
2.0
GS
AS
at 10 V
= 2.7 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
D
IRF614STRLPbF
SiHF614STL-E3
IRF614STRL
SiHF614STL
= 100 °C
= 25 °C
2
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
capable of accommodating die sizes up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
PAK (TO-263)
2
PAK (TO-263) is suitable for high current applications
2
PAK (TO-263) is a surface mount power package
a
a
SYMBOL
T
dV/dt
a
J
V
V
E
E
I
a
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
IRF614S, SiHF614S
design,
- 55 to + 150
D
IRF614STRRPbF
SiHF614STR-E3
IRF614STRR
SiHF614STR
2
LIMIT
0.025
300
± 20
0.29
PAK (TO-263)
250
2.7
1.7
8.0
2.7
3.6
3.1
4.8
61
36
low
Vishay Siliconix
d
on-resistance
a
a
a
www.vishay.com
a
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and
1

Related parts for IRF614SPBF

IRF614SPBF Summary of contents

Page 1

... Q (nC) gd Configuration 2 D PAK (TO-263 ORDERING INFORMATION 2 Package D PAK (TO-263) IRF614SPbF Lead (Pb)-free SiHF614S-E3 IRF614S SnPb SiHF614S Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS T PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current Linear Derating Factor e Linear Derating Factor (PCB Mount) ...

Page 2

... IRF614S, SiHF614S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... Pulse Width ° 91026_03 = 25 °C C 3.0 2.5 2.0 4.5 V 1.5 1.0 0.5 20 µs Pulse Width T = 150 ° 91026_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C IRF614S, SiHF614S Vishay Siliconix 0 ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics ...

Page 4

... IRF614S, SiHF614S Vishay Siliconix 300 MHz iss 250 rss oss 200 150 100 Drain-to-Source Voltage ( 91026_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 2 125 Total Gate Charge (nC) 91026_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss 10 C oss C rss 1 91026_07 Fig Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91026 S-82997-Rev. A, 12-Jan-09 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration ( IRF614S, SiHF614S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRF614S, SiHF614S Vishay Siliconix 91026_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 140 Top 120 Bottom 100 125 25 75 100 50 Starting T , Junction Temperature (° 1.2 A 1.7 A 2.7 A 150 Current regulator Same type as D.U.T. ...

Page 7

... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91026. Document Number: 91026 S-82997-Rev ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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