IRF614SPBF Vishay, IRF614SPBF Datasheet - Page 5

MOSFET N-CH 250V 2.7A D2PAK

IRF614SPBF

Manufacturer Part Number
IRF614SPBF
Description
MOSFET N-CH 250V 2.7A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF614SPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 1.6A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.2nC @ 10V
Input Capacitance (ciss) @ Vds
140pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
2.7A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
2ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
2 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.7 A
Power Dissipation
3.1 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF614SPBF
Manufacturer:
Vishay/Siliconix
Quantity:
1 871
Document Number: 91026
S-82997-Rev. A, 12-Jan-09
91026_09
Vary t
required I
Fig. 9 - Maximum Drain Current vs. Case Temperature
p
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
91026_11
25
AS
R
10 V
G
10
0.1
10
-2
1
50
V
10
T
DS
C
-5
0.05
0.02
0.01
0 − 0.5
0.2
0.1
, Case Temperature (°C)
t
p
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T
100
0.01 Ω
L
10
-4
Single Pulse
(Thermal Response)
125
150
10
+
-
t
V
-3
1
, Rectangular Pulse Duration (s)
DD
10
-2
Fig. 12b - Unclamped Inductive Waveforms
V
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
DS
V
V
DS
0.1
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
V
Notes:
1. Duty Factor, D = t
2. Peak T
IRF614S, SiHF614S
DS
t
r
t
p
1
j
= P
P
D.U.T.
DM
DM
Vishay Siliconix
R
x Z
D
t
d(off)
t
V
1
1
thJC
/t
DS
2
t
+ T
2
t
f
V
+
C
-
10
www.vishay.com
DD
V
DD
5

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