This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... oss rss gd 6000 C iss C oss 3000 C rss Drain-Source Voltage [V] DS FDPF2710T Rev. A Figure 2. Transfer Characteristics 250 100 10 1. 250 s Pulse Test µ Figure 4. Body Diode Forward Voltage 150 100 10 = 20V Note : 100 125 150 0.2 Figure 6. Gate Charge Characteristics ...
... Operation in This Area 1 is Limited by R DS(on) * Notes : 0 150 Single Pulse 0. Drain-Source Voltage 0.5 0.2 0 0.05 0.02 0. Single pulse - FDPF2710T Rev. A (Continued) Figure 8. On-Resistance Variation 2 Notes : 250 A µ -100 100 150 200 Figure 10. Maximum Drain Current 30 100 s µ 1ms 100 400 [V] DS Figure 11 ...
... Package Dimensions * Front/Back Side Isolation Voltage : AC 2500V FDPF2710T Rev. A TO-220F Potted 7 Dimensions in Millimet ers www.fairchildsemi.com ...
... Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDPF2710T Rev. A Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ Programmable Active Droop™ ...