IRFR224 Vishay, IRFR224 Datasheet

MOSFET N-CH 250V 3.8A DPAK

IRFR224

Manufacturer Part Number
IRFR224
Description
MOSFET N-CH 250V 3.8A DPAK
Manufacturer
Vishay
Datasheet

Specifications of IRFR224

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.1 Ohm @ 2.3A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
260pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.1 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.8 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFR224

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRFR224A
Manufacturer:
IR
Quantity:
12 500
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRFR224BTM
Manufacturer:
INFINEON
Quantity:
124
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRFR224BTM
Manufacturer:
FSC
Quantity:
1 250
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRFR224PBF
Manufacturer:
INFN
Quantity:
5 557
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRFR224TRLPBF
Manufacturer:
VISHAY
Quantity:
10 536
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRFR224TRPBF
Manufacturer:
Vishay/Siliconix
Quantity:
45 245
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRFR224TRPBF
Manufacturer:
NXP
Quantity:
2 500
Price:
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91271
S09-0059-Rev. A, 02-Feb-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
(TO-252)
D
DS
DS(on)
g
gs
gd
SD
DPAK
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 3.8 A, dI/dt ≤ 90 A/µs, V
= 50 V; starting T
(Ω)
G
S
D
(TO-251)
IPAK
a
J
= 25 °C, L = 14 mH, R
G
c
DPAK (TO-252)
IRFR224PbF
SiHFR224-E3
IRFR224
SiHFR224
D S
a
a
DD
b
V
≤ V
GS
e
= 10 V
DS
G
, T
N-Channel MOSFET
J
e
Single
≤ 150 °C.
250
2.7
7.8
14
G
= 25 Ω, I
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
IRFR224, IRFU224, SiHFR224, SiHFU224
1.1
GS
DPAK (TO-252)
IRFR224TRPbF
SiHFR224T-E3
IRFR224TR
SiHFR224T
AS
at 10 V
= 3.8 A (see fig. 12).
T
T
C
A
for 10 s
= 25 °C
= 25 °C
T
a
T
a
C
C
= 100 °C
= 25 °C
a
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR224, SiHFR224)
• Straight Lead (IRFU224, SiHFU224)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs form Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave solderig techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
a
SYMBOL
DPAK (TO-252)
IRFR224TRLPbF
SiHFR224TL-E3
IRFR224TRL
SiHFR224TL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
a
a
design,
a
a
- 55 to + 150
LIMIT
0.020
260
± 20
0.33
250
130
3.8
2.4
3.8
4.2
2.5
4.8
15
42
low
Vishay Siliconix
d
IPAK (TO-251)
IRFU224PbF
SiHFU224-E3
IRFU224
SiHFU224
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

Related parts for IRFR224

IRFR224 Summary of contents

Page 1

... S09-0059-Rev. A, 02-Feb-09 IRFR224, IRFU224, SiHFR224, SiHFU224 Power MOSFET FEATURES • Dynamic dV/dt Rating 250 • Repetitive Avalanche Rated 1.1 • Surface Mount (IRFR224, SiHFR224) 14 • Straight Lead (IRFU224, SiHFU224) • Available in Tape and Reel 2.7 • Fast Switching 7.8 • Ease of Paralleling Single • ...

Page 2

... IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Ambient Maximum Junction-to-Case Note a. When mounted on 1" square PCB ( FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91271 S09-0059-Rev. A, 02-Feb-09 IRFR224, IRFU224, SiHFR224, SiHFU224 = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91271 S09-0059-Rev. A, 02-Feb-09 ...

Page 5

... Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91271 S09-0059-Rev. A, 02-Feb-09 IRFR224, IRFU224, SiHFR224, SiHFU224 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...

Page 6

... IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91271 S09-0059-Rev ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91271. Document Number: 91271 S09-0059-Rev. A, 02-Feb-09 IRFR224, IRFU224, SiHFR224, SiHFU224 Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

Related keywords