IRFR224 Vishay, IRFR224 Datasheet - Page 6

• Manufacturer Part Number: IRFR224
• Description: MOSFET N-CH 250V 3.8A DPAK
• Manufacturer: Vishay

Specifications of IRFR224

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.1 Ohm @ 2.3A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 260pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.1 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.8 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFR224

IRFR224, IRFU224, SiHFR224, SiHFU224
Vishay Siliconix
www.vishay.com
6
Fig. 13a - Basic Gate Charge Waveform
10 V
V
G
Q
GS
Charge
Q
Q
GD
G
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
S09-0059-Rev. A, 02-Feb-09
Document Number: 91271
D.U.T.
I
D
+
-
V
DS