FDP030N06 Fairchild Semiconductor, FDP030N06 Datasheet

MOSFET N-CH 60V 120A TO220

FDP030N06

Manufacturer Part Number
FDP030N06
Description
MOSFET N-CH 60V 120A TO220
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDP030N06

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.2 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
151nC @ 10V
Input Capacitance (ciss) @ Vds
9815pF @ 25V
Power - Max
231W
Mounting Type
Through Hole
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.6 m Ohms at 10 V
Forward Transconductance Gfs (max / Min)
154 S
Drain-source Breakdown Voltage
60 V
Continuous Drain Current
120 A to 136 A
Power Dissipation
231 W
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FDP030N06
Manufacturer:
SUPERTEX
Quantity:
5 000
Price:
©2009 Fairchild Semiconductor Corporation
FDP030N06 Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
V
V
I
I
E
dv/dt
P
T
T
R
R
D
DM
FDP030N06
N-Channel PowerTrench
60V, 193A, 3.2m
Features
• R
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
• High Power and Current Handling Capability
• RoHS Compliant
J
L
DSS
GSS
AS
D
, T
JC
JA
Symbol
Symbol
R
STG
DS(on)
DS(on)
= 2.6m
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
( Typ.)@ V
G
D
S
GS
= 10V, I
TO-220
D
= 75A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
®
C
o
C unless otherwise noted
= 25
MOSFET
o
C)
C
C
C
= 25
= 100
= 25
1
o
C
o
o
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Convertors / Synchronous Rectification
C, Silicon Limited)
C, Package Limited)
o
C, Silicon Limited)
(Note 1)
(Note 2)
(Note 3)
G
S
D
-55 to +175
Ratings
Ratings
1434
193*
1.54
136*
±20
120
772
231
300
0.65
62.5
60
6
www.fairchildsemi.com
June 2009
Units
W/
Units
o
V/ns
mJ
C/W
o
o
W
V
V
A
A
C
C
o
C

Related parts for FDP030N06

FDP030N06 Summary of contents

Page 1

... Symbol R Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2009 Fairchild Semiconductor Corporation FDP030N06 Rev. A ® MOSFET Description = 75A This N-Channel MOSFET is produced using Fairchild Semicon- D ductor’s advanced PowerTrench process that has been espe- cially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... Repetitive Rating: Pulse width limited by maximum junction temperature 0.51mH 75A 50V Starting 75A, di/dt 450A Starting DSS 4. Pulse Test: Pulse width 300 s, Duty Cycle 5. Essentially Independent of Operating Temperature Typical Characteristics FDP030N06 Rev. A Package Reel Size TO-220 unless otherwise noted C Test Conditions I = 250 1mA, Referenced 48V, V ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 12000 C iss = oss = rss = iss 9000 6000 C oss 3000 C rss 0 0 Drain-Source Voltage [V] DS FDP030N06 Rev. A Figure 2. Transfer Characteristics 400 100 *Notes: 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage o *Note 210 280 350 Figure 6. Gate Charge Characteristics ...

Page 4

... 175 Single Pulse 0.1 0 Drain-Source Voltage [ 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0. FDP030N06 Rev. A (Continued) Figure 8. On-Resistance Variation 2.0 1.5 1.0 *Notes 10mA D 0.5 100 150 200 Figure 10. Maximum Drain Current 200 150 100 s 100 1ms 10ms 100ms ...

Page 5

... FDP030N06 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDP030N06 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions 9.90 ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 FDP030N06 Rev. A TO-220 0.20 (8.70) 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 7 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 www.fairchildsemi.com ...

Page 8

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ FPS™ Auto-SPM™ F-PFS™ FRFET Build it Now™ CorePLUS™ Global Power Resource CorePOWER™ ...

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