FDP030N06 Fairchild Semiconductor, FDP030N06 Datasheet - Page 3

MOSFET N-CH 60V 120A TO220

FDP030N06

Manufacturer Part Number
FDP030N06
Description
MOSFET N-CH 60V 120A TO220
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDP030N06

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.2 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
151nC @ 10V
Input Capacitance (ciss) @ Vds
9815pF @ 25V
Power - Max
231W
Mounting Type
Through Hole
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.6 m Ohms at 10 V
Forward Transconductance Gfs (max / Min)
154 S
Drain-source Breakdown Voltage
60 V
Continuous Drain Current
120 A to 136 A
Power Dissipation
231 W
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDP030N06
Manufacturer:
SUPERTEX
Quantity:
5 000
Part Number:
FDP030N06
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDP030N06 Rev. A
Typical Performance Characteristics
12000
9000
6000
3000
Figure 5. Capacitance Characteristics
700
100
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
10
3.5
3.0
2.5
2.0
0
0.1
0.1
0
V
GS
=
15.0 V
10.0 V
V
8.0 V
7.0 V
6.5 V
6.0 V
V
Drain Current and Gate Voltage
70
DS
DS
C
C
C
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
rss
oss
iss
I
D
, Drain Current [A]
V
GS
140
V
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
1
= 10V
GS
= 20V
*Notes:
1
210
1. 250 s Pulse Test
2. T
*Note: T
C
= 25
(
C ds = shorted
*Note:
o
1. V
2. f = 1MHz
280
C
10
C
= 25
GS
= 0V
o
C
)
350
30
5
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
400
100
400
100
10
10
10
1
8
6
4
2
0
1
0.0
2
0
*Notes:
1. V
2. 250 s Pulse Test
V
DS
20
SD
Variation vs. Source Current
and Temperature
= 10V
, Body Diode Forward Voltage [V]
V
Q
GS
150
150
g
, Gate-Source Voltage[V]
, Total Gate Charge [nC]
o
40
0.5
4
o
C
C
V
V
V
DS
DS
DS
= 15V
= 30V
= 48V
60
25
o
*Notes:
1. V
2. 250 s Pulse Test
C
25
*Note: I
80
6
1.0
-55
o
GS
C
o
C
= 0V
D
100
= 75A
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120
1.5
8

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