IRFR9020 Vishay, IRFR9020 Datasheet - Page 5

MOSFET P-CH 50V 9.9A DPAK

IRFR9020

Manufacturer Part Number
IRFR9020
Description
MOSFET P-CH 50V 9.9A DPAK
Manufacturer
Vishay
Datasheet

Specifications of IRFR9020

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 5.7A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
9.9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
490pF @ 25V
Power - Max
42W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.28 Ohms
Drain-source Breakdown Voltage
- 50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9.9 A
Power Dissipation
42 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFR9020

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IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Vishay Siliconix
Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 11 - Typical On-Resistance vs. Drain Current
Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 12 - Maximum Drain Current vs. Case Temperature
Document Number: 90350
www.vishay.com
S09-0074-Rev. A, 02-Feb-09
5

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