IRFP22N50APBF Vishay, IRFP22N50APBF Datasheet - Page 7
IRFP22N50APBF
Manufacturer Part Number
IRFP22N50APBF
Description
MOSFET N-CH 500V 22A TO-247AC
Manufacturer
Vishay
Specifications of IRFP22N50APBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
3450pF @ 25V
Power - Max
277W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.23 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
22 A
Power Dissipation
277000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
22A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
230mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFP22N50APBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP22N50APBF
Manufacturer:
IR
Quantity:
20 000
Document Number: 91207
Re-Applied
Voltage
Reverse
Recovery
Current
+
-
D.U.T
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 14. For N-Channel HEXFET
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
•
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
®
Power MOSFETs
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
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