2N7002E,215 NXP Semiconductors, 2N7002E,215 Datasheet

MOSFET N-CH 60V 385MA SOT23

2N7002E,215

Manufacturer Part Number
2N7002E,215
Description
MOSFET N-CH 60V 385MA SOT23
Manufacturer
NXP Semiconductors
Type
Power MOSFETr
Datasheet

Specifications of 2N7002E,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
385mA
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
0.69nC @ 10V
Input Capacitance (ciss) @ Vds
50pF @ 10V
Power - Max
830mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5.5 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
0.385 A
Power Dissipation
830 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
3Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±30V
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
2N7002E T/R
2N7002E T/R
2N7002E,215
568-4858-2
934056996215
1. Product profile
2. Pinning information
Table 1:
Pin
1
2
3
Description
gate (G)
source (S)
drain (D)
Pinning
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
2N7002E
N-channel TrenchMOS FET
Rev. 03 — 28 April 2006
Logic level threshold compatible
Surface-mounted package
Logic level translator
V
R
DS
DSon
Simplified outline
60 V
3
1
SOT23
3
2
Very fast switching
TrenchMOS technology
High-speed line driver
I
P
D
tot
385 mA
0.83 W
Product data sheet
Symbol
mbb076
G
D
S

Related parts for 2N7002E,215

2N7002E,215 Summary of contents

Page 1

N-channel TrenchMOS FET Rev. 03 — 28 April 2006 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. 1.2 Features Logic level threshold compatible Surface-mounted package 1.3 Applications Logic ...

Page 2

Philips Semiconductors 3. Ordering information Table 2: Ordering information Type number Package Name 2N7002E TO-236AB 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage DS V drain-gate ...

Page 3

Philips Semiconductors 120 P der (%) 100 P tot P = ------------------------ 100 % der P tot 25 C Fig 1. Normalized total power dissipation as a function of solder point temperature ...

Page 4

Philips Semiconductors 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point th(j-sp) R thermal resistance from junction to ambient th(j-a) Mounted on a printed-circuit board; minimum footprint; vertical in still air [1] ...

Page 5

Philips Semiconductors 6. Characteristics Table 5: Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage GS(th) I drain leakage current DSS I gate leakage current GSS R ...

Page 6

Philips Semiconductors (A) 0.8 0.6 0 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values (A) 0.8 0.6 ...

Page 7

Philips Semiconductors 3 V max GS(th) (V) typ 2 min 0.25 mA Fig 9. Gate-source threshold voltage as a function of junction temperature 0.3 ...

Page 8

Philips Semiconductors (A) 0.8 0.6 0.4 0.2 150 C 0 0.2 0.4 0 and 150 Fig 13. Source current as a function of source-drain voltage; typical values 2N7002E_3 Product ...

Page 9

Philips Semiconductors 7. Package outline Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 Fig 15. ...

Page 10

Philips Semiconductors 8. Revision history Table 6: Revision history Document ID Release date 2N7002E_3 20060428 • Modifications: Table 5 • Table 5 • Table 5 • Table 5 • Table 5 • Table 5 • Table 5 • Figure • ...

Page 11

Philips Semiconductors 9. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 12

Philips Semiconductors 14. Contents 1 Product profi 1.1 General description ...

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