2SK3019TL Rohm Semiconductor, 2SK3019TL Datasheet

MOSFET N-CH 30V .1A SOT416

2SK3019TL

Manufacturer Part Number
2SK3019TL
Description
MOSFET N-CH 30V .1A SOT416
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of 2SK3019TL

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 Ohm @ 10mA, 4V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100mA
Vgs(th) (max) @ Id
1.5V @ 100µA
Input Capacitance (ciss) @ Vds
13pF @ 5V
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416, EMT3, 3-SSMini
Transistor Polarity
N Channel
Continuous Drain Current Id
100mA
Drain Source Voltage Vds
30V
On Resistance Rds(on)
13ohm
Rds(on) Test Voltage Vgs
4V
Voltage Vgs Max
20V
Transistor Case Style
EMT
No. Of
RoHS Compliant
Configuration
Single
Resistance Drain-source Rds (on)
8 Ohm @ 4 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.1 A
Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Threshold Voltage Vgs Typ
1.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SK3019TLTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK3019TL
Manufacturer:
ROHM
Quantity:
3 000
Part Number:
2SK3019TL
Manufacturer:
ROHM
Quantity:
2 692
Transistor
2.5V Drive Nch MOS FET
2SK3019
Silicon N-channel
MOSFET
Interfacing, switching (30V, 100mA)
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
4) Drive circuits can be simple.
5) Parallel use is easy.
Channel to ambient
∗ With each pin mounted on the recommended lands.
Type
2SK3019
∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended lands.
Structure
Features
Packaging specifications
Thermal resistance
Applications
Absolute maximum ratings (Ta=25°C)
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
portable equipment.
Package
Code
Basic ordering unit
(pieces)
Parameter
Parameter
Continuous
Pulsed
Taping
3000
TL
Symbol
I
V
V
P
Tstg
DP
Tch
DSS
GSS
I
D
D
Rth(ch-a)
2
Symbol
1
−55 to +150
Limits
±100
±400
±20
150
150
30
Limits
833
Dimensions (Unit : mm)
(1)Source
(2)Gate
(3)Drain
EMT3
mW
Unit
mA
mA
°C
°C
V
V
°C / W
Unit
0.2
Abbreviated symbol : KN
( 3 )
∗A pr
0.5
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
( 2 )
1.6
1.0
Equivalent circuit
0.5
Gate
0.3
otection diode is included between the gate
( 1 )
0.2
∗ Gate
Protection
Diode
0.15
0.55
0.7
Rev.C
2SK3019
Source
Drain
1/3

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2SK3019TL Summary of contents

Page 1

Transistor 2.5V Drive Nch MOS FET 2SK3019 Structure Silicon N-channel MOSFET Applications Interfacing, switching (30V, 100mA) Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can ...

Page 2

Transistor Electrical characteristics (Ta=25°C) Symbol Parameter I Gate-source leakage GSS V Drain-source breakdown voltage (BR)DSS I DSS Zero gate voltage drain current V Gate threshold voltage GS(th) R Static drain-source on-state DS(on) resistance R DS(on) |Y Forward transfer admittance C ...

Page 3

Transistor 9 = Pulsed 8 7 =100mA =50mA −50 − 100 125 CHANNEL TEMPERATURE : Tch (°C) Fig.7 Static drain-source on-state resistance vs. ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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