2SK3019TL Rohm Semiconductor, 2SK3019TL Datasheet - Page 2

• Manufacturer Part Number: 2SK3019TL
• Description: MOSFET N-CH 30V .1A SOT416
• Manufacturer: Rohm Semiconductor

Specifications of 2SK3019TL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Input Capacitance (ciss) @ Vds: 13pF @ 5V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 100mA
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 13ohm
• Rds(on) Test Voltage Vgs: 4V
• Voltage Vgs Max: 20V
• Transistor Case Style: EMT
• No. Of: RoHS Compliant
• Configuration: Single
• Resistance Drain-source Rds (on): 8 Ohm @ 4 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.1 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Threshold Voltage Vgs Typ: 1.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SK3019TLTR

Transistor
Static drain-source on-state
resistance
Electrical characteristics (Ta=25°C)
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Electrical characteristic curves
Fig.1 Typical output characteristics
0.15
0.05
0.1
Fig.4 Static drain-source on-state
0
0.5
0
50
20
10
5
2
1
0.001
DRAIN-SOURCE VOLTAGE : V
0.002
resistance vs. drain current (Ι)
Parameter
1
Ta=125°C
4V
3.5V
DRAIN CURRENT : I
0.005 0.01 0.02
−25°C
75°C
25°C
V
2
GS
2.5V
2V
= 1.5V
3V
3
0.05
D
0.1
4
(A)
Ta=25°C
Pulsed
DS
V
Pulsed
(V)
GS
0.2
V
Symbol
R
R
V
=4V
(BR)DSS
t
t
I
I
|Y
C
C
DS(on)
DS(on)
C
GS(th)
d(on)
d(off)
GSS
DSS
5
t
t
oss
iss
rss
r
f
fs
0.5
|
Fig.2 Typical transfer characteristics
200m
100m
0.5m
0.2m
0.1m
Min.
50m
20m
10m
Fig.5 Static drain-source on-state
0.8
30
20
5m
2m
1m
−
−
−
−
−
−
−
−
−
−
−
0.5
50
20
10
0
5
2
1
0.001
V
Pulsed
DS
GATE-SOURCE VOLTAGE : V
0.002
resistance vs. drain current (ΙΙ)
=3V
Typ.
13
15
35
80
80
Ta=125°C
−
−
−
−
5
7
−
9
4
1
DRAIN CURRENT : I
0.005 0.01 0.02
−25°C
75°C
25°C
Max.
1.0
1.5
±1
13
−
8
−
−
−
−
−
−
−
−
2
Ta=125°C
−25°C
75°C
25°C
0.05
Unit
ms
µA
µA
pF
pF
pF
ns
ns
ns
ns
Ω
Ω
V
V
D
3
0.1
(A)
GS
V
Pulsed
GS
(V)
0.2
V
I
V
V
I
I
I
V
V
f=1MHz
I
V
R
R
=2.5V
D
D
D
D
D
GS
DS
DS
DS
GS
GS
L
G
=10µA, V
=10mA, V
=1mA, V
=10mA, V
=10mA, V
=500Ω
=10Ω
=±20V, V
=30V, V
=3V, I
=5V
=0V
=5V
4
0.5
D
GS
=100µA
GS
1.5
0.5
GS
GS
DS
DD
Conditions
15
10
=2.5V
2
1
0
−50
DS
5
0
=0V
Fig.3 Gate threshold voltage vs.
=3V
=0V
=4V
0
=0V
Fig.6 Static drain-source
CHANNEL TEMPERATURE : Tch (°C)
5V
−25
GATE-SOURCE VOLTAGE : V
channel temperature
0
5
on-state resistance vs.
gate-source voltage
25
Rev.C
50
10
2SK3019
I
I
D
D
75
=0.1A
=0.05A
100 125 150
15
V
I
Pulsed
D
Ta=25°C
Pulsed
GS
DS
=0.1mA
=3V
(V)
2/3
20