2SK2503TL Rohm Semiconductor, 2SK2503TL Datasheet

MOSFET N-CH 60V 5A DPAK

2SK2503TL

Manufacturer Part Number
2SK2503TL
Description
MOSFET N-CH 60V 5A DPAK
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of 2SK2503TL

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
135 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
2.5V @ 1mA
Input Capacitance (ciss) @ Vds
520pF @ 10V
Power - Max
20W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
135mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Configuration
Single
Resistance Drain-source Rds (on)
0.135 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5 A
Power Dissipation
20000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SK2503TL
2SK2503TLTR
Transistors
4V Drive Nch MOS FET
2SK2503
Silicon N-channel MOS FET
1) Low On-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) 4V drive.
5) Drive circuits can be simple.
6) Parallel use is easy.
Switching
Type
2SK2503
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation(Tc=25 °C )
Channel temperature
Storage temperature
Structure
Features
Applications
Packaging specifications
Absolute maximum ratings (Ta=25°C)
Reverse drain
current
Pw
10µs, Duty cycle
Package
Code
Basic ordering unit (pieces)
Parameter
1%
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
V
Tstg
Taping
I
Tch
I
I
DRP
P
2500
GSS
I
DSS
DP
DR
D
D
TL
−55 to +150
Limits
± 20
150
60
20
20
20
5
5
Unit
°C
°C
External dimensions (Unit : mm)
Inner circuit
(1) Gate
(2) Drain
(3) Source
W
V
V
A
A
A
A
(1)Gate
(2)Drain
(3)Source
CPT3
(1)
Abbreviated symbol : K2503
0.75
0.9
(1)
2.3
(2)
6.5
5.1
(2)
(3)
0.65
2.3
Rev.A
(3)
2SK2503
2.3
0.5
0.5
1.0
1/5

Related parts for 2SK2503TL

2SK2503TL Summary of contents

Page 1

Transistors 4V Drive Nch MOS FET 2SK2503 Structure Silicon N-channel MOS FET Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area drive. 5) Drive circuits can be simple. 6) Parallel use is easy. ...

Page 2

Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage Drain-source breakdown voltage V Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off ...

Page 3

Transistors Electrical characteristics curve 0 25°C Single pulse 0.1 0 100 (V) DRAIN-SOURCE VOLTAGE : V DS Fig.1 Maximum Safe Operating Area 4.0 = 10V ...

Page 4

Transistors 10 = Pulsed 5 Ta=125°C 75°C 2 25°C −25°C 1 0.5 0.2 0.1 0.05 0 0.5 1.0 1.5 (V) SOURCE-DRAIN VOLTAGE : V SD Fig.10 Reverse Drain Current vs. Source-Drain Voltage ( Ι ) 1000 Ta=25°C =30V ...

Page 5

Transistors Switching characteristics measurement circuit D.U. Fig.15 Switching Time Test Circuit Pulse Width 90% 50 10 d(on d(off) ...

Page 6

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

Related keywords