2SK2503TL Rohm Semiconductor, 2SK2503TL Datasheet - Page 2

MOSFET N-CH 60V 5A DPAK

2SK2503TL

Manufacturer Part Number
2SK2503TL
Description
MOSFET N-CH 60V 5A DPAK
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of 2SK2503TL

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
135 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
2.5V @ 1mA
Input Capacitance (ciss) @ Vds
520pF @ 10V
Power - Max
20W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
135mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Configuration
Single
Resistance Drain-source Rds (on)
0.135 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5 A
Power Dissipation
20000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SK2503TL
2SK2503TLTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK2503TL
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Static drain-source on-state
resistance
Electrical characteristics (Ta=25°C)
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Pw
300
µ
s, Duty cycle
Parameter
1%
V
Symbol
R
V
(BR)DSS
t
t
I
I
C
C
C
DS(on)
GS(th)
Y
d(on)
d(off)
GSS
DSS
t
t
oss
rss
iss
fs
r
f
Min.
1.0
4.0
60
Typ.
0.11
0.17
520
240
100
5.0
20
50
20
0.135
± 100
Max.
0.20
2.5
10
Unit
nA
µA
pF
pF
pF
ns
ns
ns
ns
V
V
S
V
I
V
V
I
I
I
V
V
f=1MHz
I
V
R
R
D
D
D
D
D
GS
DS
DS
DS
GS
GS
L
G
=1mA, V
=2.5A, V
=2.5A, V
=2.5A, V
=2.5A, V
=12Ω
=10Ω
= ± 20V, V
=60V, V
=10V, I
=10V
=0V
=10V
Test Conditions
GS
GS
DS
DD
D
GS
=1mA
GS
=10V
=4V
=10V
=30V
=0V
DS
=0V
=0V
Rev.A
2SK2503
2/5

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