PSMN012-100YS,115 NXP Semiconductors, PSMN012-100YS,115 Datasheet - Page 2

• Manufacturer Part Number: PSMN012-100YS,115
• Description: MOSFET N-CH 100V 60A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN012-100YS,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 3500pF @ 50V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Gate Charge Qg: 64 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 23 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 130 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4978-2

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN012-100YS_4
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN012-100YS LFPAK
Symbol
S
S
S
G
D
Pinning information
Ordering information
Package
Name
Description
source
source
source
gate
mounting base; connected to
drain
Table 1.
Symbol Parameter
Static characteristics
R
DSon
plastic single-ended surface-mounted package (LFPAK); 4 leads
drain-source
on-state resistance
Description
Quick reference
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 23 February 2010
…continued
N-channel 100V 12mΩ standard level MOSFET in LFPAK
Conditions
V
T
V
T
j
j
GS
GS
= 100 °C; see
= 25 °C; see
Simplified outline
= 10 V; I
= 10 V; I
SOT669 (LFPAK)
D
D
1 2 3 4
= 15 A;
= 15 A;
Figure 13
Figure 12
mb
PSMN012-100YS
Graphic symbol
Min
-
-
Typ
-
10
mbb076
G
© NXP B.V. 2010. All rights reserved.
Max
23
12
Version
SOT669
D
S
Unit
mΩ
mΩ
2 of 15