2N7000 STMicroelectronics, 2N7000 Datasheet

MOSFET N-CH 60V 350MA TO-92

2N7000

Manufacturer Part Number
2N7000
Description
MOSFET N-CH 60V 350MA TO-92
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheets

Specifications of 2N7000

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
350mA
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
2nC @ 5V
Input Capacitance (ciss) @ Vds
43pF @ 25V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
0.6 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 18 V
Continuous Drain Current
0.35 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Current, Drain
0.35 A
Gate Charge, Total
1.4 nC
Package Type
TO-92
Polarization
N-Channel
Resistance, Drain To Source On
1.8 Ohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
7 ns
Time, Turn-on Delay
5 ns
Transconductance, Forward
0.6 S
Voltage, Breakdown, Drain To Source
60 V
Voltage, Forward, Diode
1.2 V
Voltage, Gate To Source
±18 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3110

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Features
Application
Description
This Power MOSFET is the second generation of
STMicroelectronics unique “single feature size”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Table 1.
November 2008
Low Q
Low threshold drive
Switching applications
2N7000
2N7002
Type
Order codes
2N7000
2N7002
g
Device summary
V
60 V
60 V
DSS
N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92
< 5 Ω(@10V) 0.35 A
< 5 Ω(@10V) 0.20 A
R
DS(on)
2N7000G
Marking
ST2N
max
I
D
Rev 9
Figure 1.
STripFET™ Power MOSFET
SOT23-3L
Package
SOT23-3L
TO-92
SOT23-3L
3
Internal schematic diagram
1
2
Tape and reel
Packaging
TO-92
2N7000
2N7002
Bulk
TO-92
www.st.com
1/14
14

Related parts for 2N7000

2N7000 Summary of contents

Page 1

... Table 1. Device summary Order codes 2N7000 2N7002 November 2008 R max I DS(on) D Figure 1. Marking 2N7000G ST2N Rev 9 2N7000 2N7002 STripFET™ Power MOSFET SOT23-3L TO-92 Internal schematic diagram SOT23-3L Package Packaging TO-92 Bulk SOT23-3L Tape and reel TO-92 1/14 www ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/ 2N7000, 2N7002 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS I Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT 1. Pulse width limited by safe operating area Table 3. Thermal data Symbol Rthj-amb Thermal resistance junction-ambient max ...

Page 4

... 125 ° ± 4 Parameter Test conditions MHz 4.7 Ω Figure 16) (see Figure 17) (see 2N7000, 2N7002 Min. Typ 250 µA 1 2.1 = 0.5 A 1 Min. Typ 0 1.4 D 0.8 0.5 Max. Unit V 1 µA 10 µA ±100 Ω 5 Ω 5.3 Max. Unit ...

Page 5

... Table 6. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-92 Figure 4. Safe operating area for SOT23-3L Figure 6. Output characteristics 6/14 Figure 3. Thermal impedance for TO-92 Figure 5. Thermal impedance for SOT23-3L Figure 7. Transfer characteristics 2N7000, 2N7002 ...

Page 7

... Figure 8. Transconductance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 9. Static drain-source on resistance Figure 13. Normalized on resistance vs temperature 7/14 ...

Page 8

... Electrical characteristics Figure 14. Source-drain diode forward characteristics 8/14 Figure 15. Normalized B VDSS 2N7000, 2N7002 vs temperature ...

Page 9

... Test circuits Figure 16. Switching times test circuit for resistive load D.U. Figure 18. Test circuit for inductive load switching and diode recovery times FAST L=100µH G D.U.T. DIODE Ω Figure 20. Unclamped inductive waveform Figure 17. Gate charge test circuit 3.3 2200 µ ...

Page 10

... These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK trademark. ECOPACK specifications are available at: 10/14 www.st.com 2N7000, 2N7002 ...

Page 11

... Table 7. TO-92 mechanical data Dim Figure 22. TO-92 drawing mm Min. Typ. 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 0.92 0.41 5° Package mechanical data Max. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 0102782 D 11/14 ...

Page 12

... SOT23-3L mechanical data Dim Figure 23. SOT23-3L drawing 8162275_Rev_A 12/14 mm Min. Typ. 0 1.00 0.60 2.826 2.60 1.526 0.95 1.90 0.35 0.59 0.25 0.05 0.05 3° 6° Top view 2N7000, 2N7002 Max. 1.25 0.15 1.20 0.70 3.026 3.00 1.726 0.60 0.20 7° 10° Bottom view ...

Page 13

... Revision history Table 9. Document revision history Date 09-Oct-2004 22-Jun-2004 06-Apr-2005 19-Apr-2005 26-Apr-2005 28-Apr-2005 19-Jun-2006 03-Sep-2007 04-Nov-2008 Revision 1 First document 2 Complete document 3 New typ and max value inserted for Vgs(th) 4 The document has been reformatted 5 New Pin configuration for TO-92 ...

Page 14

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com 2N7000, 2N7002 ...

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