IRF6710S2TR1PBF International Rectifier, IRF6710S2TR1PBF Datasheet - Page 7

MOSFET N-CH 25V 12A DIRECTFET

IRF6710S2TR1PBF

Manufacturer Part Number
IRF6710S2TR1PBF
Description
MOSFET N-CH 25V 12A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF6710S2TR1PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.9 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
2.4V @ 25µA
Gate Charge (qg) @ Vgs
13nC @ 4.5V
Input Capacitance (ciss) @ Vds
1190pF @ 13V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric S1
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
11.9 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
37 A
Power Dissipation
15 W
Gate Charge Qg
8.8 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF6710S2TR1PBFTR
www.irf.com
0
Fig 19a. Unclamped Inductive Test Circuit
R G
20V
Fig 20a. Switching Time Test Circuit
Fig 18a. Gate Charge Test Circuit
V DS
t p
20K
1K
≤ 0.1 %
≤ 1
I AS
D.U.T
0.01 Ω
L
S
DUT
15V
L
DRIVER
+
- V DD
+
-
VCC
A
90%
V
10%
V
GS
I
AS
DS
Id
Fig 19b. Unclamped Inductive Waveforms
Fig 20b. Switching Time Waveforms
Vgs
Fig 18b. Gate Charge Waveform
t
d(off)
t
Qgodr
f
t p
Qgd
t
d(on)
V
(BR)DSS
Qgs2
t
r
Vgs(th)
Vds
Qgs1
7

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