STP20NF06L STMicroelectronics, STP20NF06L Datasheet - Page 5
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STP20NF06L
Manufacturer Part Number
STP20NF06L
Description
MOSFET N-CH 60V 20A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STP20NF06L.pdf
(16 pages)
Specifications of STP20NF06L
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
70 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
7.5nC @ 10V
Input Capacitance (ciss) @ Vds
400pF @ 25V
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.07 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
10 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 18 V
Continuous Drain Current
20 A
Power Dissipation
60000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
10A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
60mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4375-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP20NF06L
Manufacturer:
STMicroelectronics
Quantity:
1 889
Company:
Part Number:
STP20NF06L
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP20NF06L
Manufacturer:
ST
Quantity:
20 000
STB20NF06L - STF20NF06L - STP20NF06L
Table 5.
Table 6.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Symbol
Symbol
I
V
SDM
t
t
I
SD
d(on)
d(off)
RRM
I
Q
SD
t
t
t
rr
r
f
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
I
I
V
(see
V
R
(see
SD
SD
DD
DD
G
= 20A, V
= 20A, di/dt = 100A/µs,
= 4.7Ω V
= 20V, T
= 30V, I
Figure
Figure
Test conditions
Test conditions
17)
15)
GS
GS
D
j
= 150°C
= 10A
= 0
= 10V
Min.
Min.
Electrical characteristics
Typ.
Typ.
12
30
20
6
50
65
3
Max.
Max.
1.5
20
80
Unit
Unit
ns
ns
ns
ns
nC
ns
A
A
V
A
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