STP3N62K3 STMicroelectronics, STP3N62K3 Datasheet - Page 10
![MOSFET N-CH 620V 2.7A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP3N62K3
Manufacturer Part Number
STP3N62K3
Description
MOSFET N-CH 620V 2.7A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STP3N62K3.pdf
(20 pages)
Specifications of STP3N62K3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 Ohm @ 1.4A, 10V
Drain To Source Voltage (vdss)
620V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
385pF @ 25V
Power - Max
45W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.5 Ohm @ 10 V
Drain-source Breakdown Voltage
620 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.7 A
Power Dissipation
45 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8449-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP3N62K3
Manufacturer:
STMicroelectronics
Quantity:
1 995
Company:
Part Number:
STP3N62K3
Manufacturer:
TOSHIBA
Quantity:
3 000
Test circuits
3
10/20
Figure 16. Switching times test circuit for
Figure 18. Test circuit for inductive load
Figure 20. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuits
STB3N62K3, STD3N62K3, STF3N62K3, STP3N62K3, STU3N62K3
Doc ID 14894 Rev 2
Figure 17. Gate charge test circuit
Figure 19. Unclamped Inductive load test
Figure 21. Switching time waveform
circuit