STP16NF25 STMicroelectronics, STP16NF25 Datasheet - Page 4

• Manufacturer Part Number: STP16NF25
• Description: MOSFET N-CH 250V 13A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP16NF25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 235 mOhm @ 6.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 680pF @ 25V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.5A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 195mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.235 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7509-5; STP16NF25

Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
2. C
C
V
Symbol
Symbol
CASE
R
V
oss eq.
(BR)DSS
g
increases from 0 to 80%
t
t
I
C
I
C
GS(th)
DS(on)
C
Q
d(on)
d(off)
Q
DSS
GSS
R
fs
Q
oss eq.
oss
t
t
iss
rss
gs
gd
r
f
G
(1)
g
=25°C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Intrinsic gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
T
V
V
V
V
V
V
V
V
f=1MHz, open drain
V
R
(see
V
V
(see
D
C
DS
DS
GS
DS
GS
GS
GS
GS
DS
DS
DS
DD
DD
G
= 1mA, V
= 125°C
Test conditions
= 4.7Ω V
Test conditions
= max ratings
= max ratings,
= ± 20V
= V
= 10V, I
= 15V, I
= 25V, f = 1MHz,
= 0
= 0V to 200V,
= 0
= 125V, I
= 200V, I
= 10V
Figure
Figure
GS
, I
GS
D
18)
19)
D
GS
D
D
D
= 6.5A
= 6.5A
= 250µA
STD16NF25 - STF16NF25 - STP16NF25
=0
= 6.5A
= 10V
= 6.5A,
Min.
Min.
250
2
0.195
Typ.
Typ.
680
125
2.1
10
20
48
17
35
17
18
3
9
3
8
oss
0.235
Max.
Max.
±100
10
1
4
when V
DS
Unit
Unit
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
Ω
V
V
Ω