IRF9Z34NLPBF International Rectifier, IRF9Z34NLPBF Datasheet - Page 11
![MOSFET P-CH 55V 19A TO-262](/photos/5/32/53250/to-262_sml.jpg)
IRF9Z34NLPBF
Manufacturer Part Number
IRF9Z34NLPBF
Description
MOSFET P-CH 55V 19A TO-262
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF9Z34NSTRLPBF.pdf
(11 pages)
Specifications of IRF9Z34NLPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
19A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
620pF @ 25V
Power - Max
3.8W
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 19 A
Power Dissipation
68 W
Mounting Style
Through Hole
Gate Charge Qg
23.3 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF9Z34NLPBF
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/