IRF540ZPBF International Rectifier, IRF540ZPBF Datasheet

MOSFET N-CH 100V 36A TO-220AB

IRF540ZPBF

Manufacturer Part Number
IRF540ZPBF
Description
MOSFET N-CH 100V 36A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRF540ZPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
26.5 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1770pF @ 25V
Power - Max
92W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Application
For automotive applications
Channel Type
N-Channel
Current, Drain
36 A
Fall Time
39 ns (Typ.)
Gate Charge, Total
42 nC
Mounting And Package Type
PCB Mount and TO-220AB Package
Operating And Storage Temperature
-55 to +175 °C (Max.)
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
92 W
Resistance, Drain To Source On
21 Milliohms
Resistance, Thermal, Junction To Case
1.64 °C⁄W (Max.)
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Thermal Resistance, Junction To Ambient
62 °C⁄W
Time, Rise
51 ns (Typ.)
Time, Turn-off Delay
43 ns
Time, Turn-on Delay
15 ns
Transconductance, Forward
36 V
Voltage, Breakdown, Drain To Source
100 V
Voltage, Diode Forward
1.3 V (Typ.)
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
36 A
Mounting Style
Through Hole
Gate Charge Qg
42 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF540ZPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF540ZPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF540ZPBF
Quantity:
4 000
Specifically designed for Automotive applications,
this HEXFET
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
Features
l
l
l
l
l
l
Description
Absolute Maximum Ratings
I
I
I
P
V
E
E
I
E
T
T
Thermal Resistance
R
R
R
R
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
θJC
θCS
θJA
θJA
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
(Tested )
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Power Dissipation
®
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
Power MOSFET utilizes the latest
Ã
Parameter
Parameter
i
AUTOMOTIVE MOSFET
GS
GS
g
@ 10V
@ 10V
d
j
i
i
(Silicon Limited)
h
TO-220AB
G
IRF540Z
HEXFET
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
0.50
–––
–––
–––
10 lbf
S
D
-55 to + 175
IRF540ZS
D
y
Max.
in (1.1N
0.61
2
140
± 20
120
36
25
92
83
Pak
®
R
IRF540ZSPbF
IRF540ZLPbF
DS(on)
Power MOSFET
V
IRF540ZPbF
y
m)
DSS
Max.
1.64
I
–––
62
40
D
= 36A
= 26.5mΩ
= 100V
IRF540ZL
PD - 95531
TO-262
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

Related parts for IRF540ZPBF

IRF540ZPBF Summary of contents

Page 1

... Case-to-Sink, Flat Greased Surface θCS R Junction-to-Ambient θJA R Junction-to-Ambient (PCB Mount) θJA AUTOMOTIVE MOSFET G TO-220AB IRF540Z Parameter @ 10V (Silicon Limited 10V Parameter 95531 IRF540ZPbF IRF540ZSPbF IRF540ZLPbF ® HEXFET Power MOSFET 100V DSS R = 26.5mΩ DS(on 36A Pak TO-262 IRF540ZS IRF540ZL Max. Units 36 25 ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) 1.15 (.045 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 3X 0.69 ...

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