IRF540ZPBF International Rectifier, IRF540ZPBF Datasheet - Page 4

• Manufacturer Part Number: IRF540ZPBF
• Description: MOSFET N-CH 100V 36A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF540ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1770pF @ 25V
• Power - Max: 92W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Application: For automotive applications
• Channel Type: N-Channel
• Current, Drain: 36 A
• Fall Time: 39 ns (Typ.)
• Gate Charge, Total: 42 nC
• Mounting And Package Type: PCB Mount and TO-220AB Package
• Operating And Storage Temperature: -55 to +175 °C (Max.)
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 92 W
• Resistance, Drain To Source On: 21 Milliohms
• Resistance, Thermal, Junction To Case: 1.64 °C⁄W (Max.)
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Thermal Resistance, Junction To Ambient: 62 °C⁄W
• Time, Rise: 51 ns (Typ.)
• Time, Turn-off Delay: 43 ns
• Time, Turn-on Delay: 15 ns
• Transconductance, Forward: 36 V
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Diode Forward: 1.3 V (Typ.)
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 36 A
• Mounting Style: Through Hole
• Gate Charge Qg: 42 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF540ZPBF

4
1000.0
100.0
3000
2500
2000
1500
1000
10.0
500
1.0
0.1
Fig 5. Typical Capacitance Vs.
0
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
T J = 175°C
0.4
V SD , Source-toDrain Voltage (V)
Ciss
Coss
Crss
V DS , Drain-to-Source Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.6
T J = 25°C
0.8
f = 1 MHZ
10
1.0
V GS = 0V
1.2
1.4
100
1000
100
0.1
20
16
12
10
Fig 8. Maximum Safe Operating Area
8
4
0
1
Fig 6. Typical Gate Charge Vs.
0
1
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 22A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
10
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
20
10
V DS = 80V
VDS= 50V
VDS= 20V
30
FOR TEST CIRCUIT
SEE FIGURE 13
100
www.irf.com
40
10msec
1msec
100µsec
50
1000
60