IRF540ZPBF International Rectifier, IRF540ZPBF Datasheet - Page 7

• Manufacturer Part Number: IRF540ZPBF
• Description: MOSFET N-CH 100V 36A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF540ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1770pF @ 25V
• Power - Max: 92W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Application: For automotive applications
• Channel Type: N-Channel
• Current, Drain: 36 A
• Fall Time: 39 ns (Typ.)
• Gate Charge, Total: 42 nC
• Mounting And Package Type: PCB Mount and TO-220AB Package
• Operating And Storage Temperature: -55 to +175 °C (Max.)
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 92 W
• Resistance, Drain To Source On: 21 Milliohms
• Resistance, Thermal, Junction To Case: 1.64 °C⁄W (Max.)
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Thermal Resistance, Junction To Ambient: 62 °C⁄W
• Time, Rise: 51 ns (Typ.)
• Time, Turn-off Delay: 43 ns
• Time, Turn-on Delay: 15 ns
• Transconductance, Forward: 36 V
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Diode Forward: 1.3 V (Typ.)
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 36 A
• Mounting Style: Through Hole
• Gate Charge Qg: 42 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF540ZPBF

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1000
100
0.1
100
10
90
80
70
60
50
40
30
20
10
1.0E-08
1
0
Fig 16. Maximum Avalanche Energy
25
Duty Cycle = Single Pulse
Starting T J , Junction Temperature (°C)
0.01
0.10
0.05
50
Vs. Temperature
1.0E-07
TOP
BOTTOM 10% Duty Cycle
I D = 20A
75
Fig 15. Typical Avalanche Current Vs.Pulsewidth
100
Single Pulse
1.0E-06
125
150
1.0E-05
175
tav (sec)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. ∆T
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
every part type.
not exceeded.
Figures 12a, 12b.
avalanche pulse.
voltage increase during avalanche).
T
t
D = Duty cycle in avalanche = t
Z
av
av =
thJC
D (ave)
jmax
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 15, 16).
1.0E-04
= Average power dissipation per single
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
= 1/2 ( 1.3·BV·I
I
E
Allowed avalanche Current vs
avalanche
assuming ∆ Tj = 25°C due to
avalanche losses
av
AS (AR)
= 2DT/ [1.3·BV·Z
1.0E-03
= P
D (ave)
jmax
pulsewidth,
av
av
. This is validated for
·f
) = DT/ Z
·t
th
av
1.0E-02
]
thJC
tav
jmax
1.0E-01
7
is