IRL1404ZSTRLPBF International Rectifier, IRL1404ZSTRLPBF Datasheet - Page 7

MOSFET N-CH 40V 75A D2PAK

IRL1404ZSTRLPBF

Manufacturer Part Number
IRL1404ZSTRLPBF
Description
MOSFET N-CH 40V 75A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRL1404ZSTRLPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.1 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2.7V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 5V
Input Capacitance (ciss) @ Vds
5080pF @ 25V
Power - Max
200W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
200A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
2.5mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.7V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRL1404ZSTRLPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRL1404ZSTRLPBF
Manufacturer:
IR
Quantity:
5 099
Part Number:
IRL1404ZSTRLPBF
Manufacturer:
IR
Quantity:
10 035
www.irf.com
1000
100
250
200
150
100
10
50
1.0E-05
1
0
Fig 16. Maximum Avalanche Energy
25
0.01
0.05
0.10
Starting T J , Junction Temperature (°C)
Duty Cycle = Single Pulse
50
vs. Temperature
TOP
BOTTOM 1% Duty Cycle
I D = 75A
75
100
Fig 15. Typical Avalanche Current vs.Pulsewidth
1.0E-04
Single Pulse
125
150
175
tav (sec)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. T
1.0E-03
Purely a thermal phenomenon and failure occurs at a
not exceeded.
Figures 12a, 12b.
T
t
D = Duty cycle in avalanche = t
Z
temperature far in excess of T
every part type.
avalanche pulse.
voltage increase during avalanche).
av
av =
thJC
D (ave)
jmax
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 15, 16).
= Average power dissipation per single
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
= 1/2 ( 1.3·BV·I
I
E
Allowed avalanche Current vs
avalanche
assuming
avalanche losses
av
AS (AR)
= 2DT/ [1.3·BV·Z
1.0E-02
= P
D (ave)
jmax
pulsewidth,
Tj = 25°C due to
av
av
. This is validated for
·f
) = DT/ Z
·t
th
av
]
thJC
tav
jmax
1.0E-01
7
is

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