IRF3707PBF International Rectifier, IRF3707PBF Datasheet - Page 6

• Manufacturer Part Number: IRF3707PBF
• Description: MOSFET N-CH 30V 62A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3707PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 62A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1990pF @ 15V
• Power - Max: 87W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3707PBF

IRF3707S/LPbF
I
Fig 15a&b. Unclamped Inductive Test circuit
AS
12V
Fig 14a&b. Basic Gate Charge Test circuit
V
6
GS
Same Type as D.U.T.
Fig 12. On-Resistance Vs. Drain Current
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
Current Regulator
.2µF
50KΩ
3mA
t p
Current Sampling Resistors
0
.3µF
I
G
V
(BR)DSS
D.U.T.
and Waveforms
and Waveforms
I
50
D
I D , Drain Current ( A )
+
-
V
DS
100
V
R G
GS
20V
V DS
VGS = 4.5V
VGS = 10V
V
t p
G
150
Q
I AS
GS
D.U.T
0.01 Ω
L
Q
Charge
Q
GD
G
200
15V
DRIVER
250
+
- V DD
A
0.013
0.012
0.011
0.010
0.009
Fig 13. On-Resistance Vs. Gate Voltage
600
500
400
300
200
100
0
Fig 15c. Maximum Avalanche Energy
4.0
25
Starting T , Junction Temperature ( C)
V GS, Gate -to -Source Voltage (V)
5.0
50
Vs. Drain Current
J
6.0
75
100
7.0
I D = 31A
125
TOP
BOTTOM
8.0
www.irf.com
150
9.0
10.1A
20.7A
24.8A
°
I D
175
10.0