IRFB23N15DPBF International Rectifier, IRFB23N15DPBF Datasheet

MOSFET N-CH 150V 23A TO-220AB

IRFB23N15DPBF

Manufacturer Part Number
IRFB23N15DPBF
Description
MOSFET N-CH 150V 23A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRFB23N15DPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
90 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
56nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
3.8W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Channel Type
N
Current, Drain
23 A
Gate Charge, Total
37 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
136 W
Resistance, Drain To Source On
0.09 Ohm
Resistance, Thermal, Junction To Case
1.1 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
18 ns
Time, Turn-on Delay
10 ns
Transconductance, Forward
11 S
Voltage, Breakdown, Drain To Source
150 V
Voltage, Drain To Source
150 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±30 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
23 A
Mounting Style
Through Hole
Gate Charge Qg
37 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFB23N15DPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRFB23N15DPBF
Manufacturer:
FSC
Quantity:
5 000
Price:
l
l
l
l
l
Typical SMPS Topologies
l
www.irf.com
Applications
Absolute Maximum Ratings
Notes  through ‡
Benefits
I
I
I
P
P
V
dv/dt
T
T
D
D
DM
J
STG
D
D
GS
@ T
@ T
Effective C
App. Note AN1001)
and Current
High frequency DC-DC converters
Lead-Free
Low Gate-to-Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
@T
@T
Telecom 48V input DC-DC Active Clamp Reset Forward Converter
Switching Losses
C
C
A
C
= 25°C
= 100°C
= 25°C
= 25°C
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
are on page 11
to Simplify Design, (See
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
IRFB23N15D
TO-220AB
V
150V
DSS
300 (1.6mm from case )
HEXFET
-55 to + 175
10 lbf•in (1.1N•m)
R
IRFS23N15D
Max.
136
± 30
3.8
0.9
4.1
DS(on)
23
17
92
IRFSL23N15DPbF
D
IRFB23N15DPbF
IRFS23N15DPbF
0.090Ω
2
Pak
®
Power MOSFET
max
IRFSL23N15D
PD - 95535
TO-262
Units
W/°C
V/ns
23A
°C
W
I
A
V
D
1

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IRFB23N15DPBF Summary of contents

Page 1

... Notes  through ‡ are on page 11 www.irf.com SMPS MOSFET HEXFET V DSS 150V TO-220AB IRFB23N15D @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N• 95535 IRFB23N15DPbF IRFS23N15DPbF IRFSL23N15DPbF ® Power MOSFET R max I DS(on) D 0.090Ω 23A 2 D Pak TO-262 IRFS23N15D IRFSL23N15D Max ...

Page 2

IRFB/IRFS/IRFSL23N15DPbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 12V 10V 8.0V 7.0V 6.0V 10 5.5V BOTTOM 5.0V 1 5.0V 0.1 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ° ...

Page 4

IRFB/IRFS/IRFSL23N15DPbF 10000 0V, C iss = rss = oss = Ciss 1000 Coss 100 Crss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 (THERMAL ...

Page 6

IRFB/IRFS/IRFSL23N15DPbF D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 14. For N-Channel HEXFET www.irf.com IRFB/IRFS/IRFSL23N15DPbF + • • ƒ • - „ ...

Page 8

IRFB/IRFS/IRFSL23N15DPbF Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING ...

Page 9

Dimensions are shown in millimeters (inches ...

Page 10

IRFB/IRFS/IRFSL23N15DPbF TO-262 Package Outline TO-262 Part Marking Information E X AMP COD ...

Page 11

D Pak Tape & Reel Infomation TRR FEED DIRECTION TRL FEED DIRECTION NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Notes:  Repetitive rating; pulse ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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