IRFB23N15DPBF International Rectifier, IRFB23N15DPBF Datasheet - Page 5

• Manufacturer Part Number: IRFB23N15DPBF
• Description: MOSFET N-CH 150V 23A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB23N15DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Current, Drain: 23 A
• Gate Charge, Total: 37 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 136 W
• Resistance, Drain To Source On: 0.09 Ohm
• Resistance, Thermal, Junction To Case: 1.1 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 18 ns
• Time, Turn-on Delay: 10 ns
• Transconductance, Forward: 11 S
• Voltage, Breakdown, Drain To Source: 150 V
• Voltage, Drain To Source: 150 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±30 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 23 A
• Mounting Style: Through Hole
• Gate Charge Qg: 37 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB23N15DPBF

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0.01
25
20
15
10
0.1
10
5
0
0.00001
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
Case Temperature
C
75
100
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
125
°
t , Rectangular Pulse Duration (sec)
150
1
175
IRFB/IRFS/IRFSL23N15DPbF
0.001
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
r
J
≤ 0.1 %
≤ 1
0.01
DM
x Z
1
thJC
P
2
DM
t
d(off)
+ T
C
t
1
t
f
t
2
+
-
5
0.1