STP85NF55 STMicroelectronics, STP85NF55 Datasheet - Page 7
![MOSFET N-CH 55V 80A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP85NF55
Manufacturer Part Number
STP85NF55
Description
MOSFET N-CH 55V 80A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STP85NF55.pdf
(15 pages)
Specifications of STP85NF55
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
3700pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
120 S
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6744-5
STP85NF55
STP85NF55
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP85NF55
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STP85NF55
Manufacturer:
STMicroelectronics
Quantity:
2 400
Company:
Part Number:
STP85NF55L
Manufacturer:
ST
Quantity:
500
Company:
Part Number:
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Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STP85NF55L
Manufacturer:
FSC
Quantity:
40 000
Part Number:
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Manufacturer:
ST
Quantity:
20 000
STB/I/P85NF55
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
(norm)
V
GS(th)
V
(V)
1.0
0.6
(V)
1.2
0.4
V
0.8
1.2
0.9
0.6
GS
12
0.3
16
SD
4
8
0
0
0
Gate charge vs gate-source voltage Figure 9.
vs temperature
-50
characteristics
30
20
0
60
40
50
90
60
100
120
80
GC93660
GC93680
GC93700
T
J
Q
I
(°C)
SD
g
Doc ID 8405 Rev 9
(nC)
(A)
Figure 11. Normalized on resistance vs
Figure 13. Normalized B
(norm)
(norm)
R
BV
6000
8000
4000
2000
DS(on)
1.05
1.00
0.95
1.10
0.90
(pF)
DSS
0.2
1.0
0.6
1.8
1.4
C
0
Capacitance variations
temperature
-50
-50
10
0
0
20
Electrical characteristics
50
50
VDSS
30
vs temperature
100
100
40
GC93710
GC93670
GC93690
T
T
V
J
J
DS
(°C)
(°C)
(V)
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