STP85NF55 STMicroelectronics, STP85NF55 Datasheet - Page 7

• Manufacturer Part Number: STP85NF55
• Description: MOSFET N-CH 55V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP85NF55

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 3700pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 120 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6744-5; STP85NF55

STB/I/P85NF55
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
(norm)
V
GS(th)
V
(V)
1.0
0.6
(V)
1.2
0.4
V
0.8
1.2
0.9
0.6
GS
12
0.3
16
SD
4
8
0
0
0
Gate charge vs gate-source voltage Figure 9.
vs temperature
-50
characteristics
30
20
0
60
40
50
90
60
100
120
80
GC93660
GC93680
GC93700
T
J
Q
I
(°C)
SD
g
Doc ID 8405 Rev 9
(nC)
(A)
Figure 11. Normalized on resistance vs
Figure 13. Normalized B
(norm)
(norm)
R
BV
6000
8000
4000
2000
DS(on)
1.05
1.00
0.95
1.10
0.90
(pF)
DSS
0.2
1.0
0.6
1.8
1.4
C
0
Capacitance variations
temperature
-50
-50
10
0
0
20
Electrical characteristics
50
50
VDSS
30
vs temperature
100
100
40
GC93710
GC93670
GC93690
T
T
V
J
J
DS
(°C)
(°C)
(V)
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