IXTA200N055T2 IXYS, IXTA200N055T2 Datasheet

MOSFET N-CH 55V 200A TO-263

IXTA200N055T2

Manufacturer Part Number
IXTA200N055T2
Description
MOSFET N-CH 55V 200A TO-263
Manufacturer
IXYS
Series
TrenchT2™r
Datasheet

Specifications of IXTA200N055T2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.2 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
109nC @ 10V
Input Capacitance (ciss) @ Vds
6800pF @ 25V
Power - Max
360W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0042 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
200 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
55
Id(cont), Tc=25°c, (a)
200
Rds(on), Max, Tj=25°c, (?)
0.0042
Ciss, Typ, (pf)
6970
Qg, Typ, (nc)
109
Trr, Typ, (ns)
49
Pd, (w)
360
Rthjc, Max, (k/w)
0.42
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTA200N055T2
Manufacturer:
IXYS
Quantity:
627
Trench
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
LRMS
DM
AR
GSS
DSS
J
JM
stg
L
sold
DSS
DGR
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Transient
T
Lead Current Limit, RMS
T
T
T
T
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-263
TO-220
V
V
V
V
V
V
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
T2
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 0V
= 10V, I
TM
GS
DSS
, I
D
D
D
= 250μA
= 250μA
= 50A, Notes 1, 2
DS
= 0V
GS
= 1MΩ
T
J
= 150°C
JM
IXTA200N055T2
IXTP200N055T2
-55 ... +175
-55 ... +175
Min.
2.0
55
Maximum Ratings
1.13 / 10
Characteristic Values
± 20
200
500
100
600
360
175
300
260
2.5
3.0
Typ.
55
55
75
3.3
±200
Nm/lb.in.
Max.
4.0
4.2 mΩ
50 μA
5 μA
mJ
°C
°C
°C
°C
°C
nA
W
V
V
V
A
A
A
A
V
V
g
g
V
I
R
TO-263 (IXTA)
TO-220 (IXTP)
G = Gate
S = Source
Features
Advantages
Applications
D25
(UIS) rated
International standard packages
Unclamped Inductive Switching
Low package inductance
175°C Operating Temperature
High current handling capability
Automotive Engine Control
Synchronous Buck Converter
(for notebook systempower & General
purpose point & load.)
DC/DC Converters
High Current Switching Applications
Power Train Management
Technology for extremely low R
Distributed Power Architecture
ROHS Compliant
High performance Trench
Easy to mount
Space savings
High power density
Synchronous
DS(on)
DSS
G
D
G
S
= 55V
= 200A
≤ ≤ ≤ ≤ ≤
S
D = Drain
TAB = Drain
4.2mΩ Ω Ω Ω Ω
(TAB)
(TAB)
DS99919B(3/08)
DS(on)

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IXTA200N055T2 Summary of contents

Page 1

... ± 20V GSS DSS DS DSS 10V 50A, Notes 1, 2 DS(on © 2008 IXYS CORPORATION, All rights reserved IXTA200N055T2 IXTP200N055T2 Maximum Ratings 55 = 1MΩ ± 20 200 75 500 JM 100 600 360 -55 ... +175 175 -55 ... +175 300 260 1. 2.5 3.0 Characteristic Values Min. Typ 150° ...

Page 2

... I 35 DSS D D25 24 0.50 Characteristic Values Min. Typ 2.6 64 Kelvin test contact DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA200N055T2 IXTP200N055T2 TO-263 (IXTA) Outline Max 0.42 °C/W °C/W Max. 200 A 600 A TO-220 (IXTP) Outline 1 ...

Page 3

... Value 175º 25º 200 250 300 -50 IXTA200N055T2 IXTP200N055T2 Fig. 2. Extended Output Characteristics @ 25º 15V GS 10V 0.5 1.0 1.5 2.0 2 Volts DS Fig Normalized 100A Value DS(on) D vs. Junction Temperature V = 10V 200A D -25 ...

Page 4

... IXYS reserves the right to change limits, test conditions, and dimensions. 140 120 100 5.0 5.5 6.0 6 25ºC J 0.9 1.0 1.1 1.2 1.3 1,000 C iss 100 C oss 10 C rss IXTA200N055T2 IXTP200N055T2 Fig. 8. Transconductance 100 120 I - Amperes D Fig. 10. Gate Charge 28V 100A ...

Page 5

... 30V 105 115 125 d(off) = 3.3 Ω 10V 30V 25º IXTA200N055T2 IXTP200N055T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 24.0 = 3.3 Ω 23 10V 30V T = 125º 23.0 22.5 22.0 21.5 21 20.5 20 Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature d(off 3.3 Ω ...

Page 6

... IXYS reserves the right to change limits, test conditions, and dimensions. Fig. 19. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTA200N055T2 IXTP200N055T2 0.1 1 IXYS REF: T_200N055T2(V5)3-06-08-B 10 ...

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