IXTA200N055T2 IXYS, IXTA200N055T2 Datasheet - Page 2

• Manufacturer Part Number: IXTA200N055T2
• Description: MOSFET N-CH 55V 200A TO-263
• Manufacturer: IXYS
• Series: TrenchT2™r

Specifications of IXTA200N055T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 200A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 109nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 360W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0042 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 200 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 55
• Id(cont), Tc=25°c, (a): 200
• Rds(on), Max, Tj=25°c, (?): 0.0042
• Ciss, Typ, (pf): 6970
• Qg, Typ, (nc): 109
• Trr, Typ, (ns): 49
• Pd, (w): 360
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes: 1.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
S
SM
RM
d(on)
r
d(off)
f
rr
IXYS reserves the right to change limits, test conditions, and dimensions.
fs
SD
iss
oss
rss
thJC
thCH
g(on)
gs
gd
RM
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
2. On through-hole packages, R
location must be 5mm or less from the package body.
Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
V
Repetitive, Pulse width limited by T
V
Resistive Switching Times
V
R
V
V
I
I
-di/dt = 100A/μs
V
Test Conditions
TO-220
Test Conditions
F
F
DS
GS
GS
GS
R
GS
G
= 100A, V
= 50A, V
= 27V
= 10V, I
= 3.3Ω (External)
= 0V, V
= 10V, V
= 0V
= 10V, V
GS
DS
D
GS
DS
DS
= 60A, Note 1
= 0V, Note 1
= 25V, f = 1MHz
= 0V
= 30V, I
= 0.5 • V
4,835,592
4,881,106
D
DSS
4,931,844
5,017,508
5,034,796
= 50A
, I
DS(on)
D
= 0.5 • I
Kelvin test contact
5,049,961
5,063,307
5,187,117
JM
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
Characteristic Values
Characteristic Values
50
6,162,665
6,259,123 B1
6,306,728 B1
6970
1026
Typ.
Typ.
0.50
228
109
2.6
64
49
80
49
27
35
24
26
22
Max.
Max.
0.42 °C/W
200
600
1.0
6,404,065 B1
6,534,343
6,583,505
°C/W
nC
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
Pins: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
3 - Source
IXTA200N055T2
IXTP200N055T2
7,005,734 B2
7,063,975 B2
2 - Drain
4 - Drain
7,157,338B2