IRFB59N10DPBF International Rectifier, IRFB59N10DPBF Datasheet - Page 4

• Manufacturer Part Number: IRFB59N10DPBF
• Description: MOSFET N-CH 100V 59A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB59N10DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 35.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 59A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 114nC @ 10V
• Input Capacitance (ciss) @ Vds: 2450pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 59 A
• Gate Charge, Total: 76 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 0.025 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 20 ns
• Time, Turn-on Delay: 16 ns
• Transconductance, Forward: 18 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±30 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 59 A
• Mounting Style: Through Hole
• Gate Charge Qg: 76 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB59N10DPBF

100000
10000
IRFB/IRFS/IRFSL59N10DPbF
1000
100
4
1000
100
0.1
1
10
1
Fig 7. Typical Source-Drain Diode
0.2
Fig 5. Typical Capacitance Vs.
T = 175 C
Drain-to-Source Voltage
J
V DS , Drain-to-Source Voltage (V)
V
SD
0.6
Forward Voltage
,Source-to-Drain Voltage (V)
°
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
T = 25 C
1.0
J
10
°
f = 1 MHZ
1.4
Crss
Coss
Ciss
V
SHORTED
1.8
GS
= 0 V
100
2.2
1000
100
20
16
12
10
8
4
0
1
Fig 8. Maximum Safe Operating Area
0
1
I =
Fig 6. Typical Gate Charge Vs.
D
T
T
Single Pulse
C
J
= 25 C
= 175 C
35.4A
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
V
20
DS
Q , Total Gate Charge (nC)
°
°
G
, Drain-to-Source Voltage (V)
40
10
BY R
60
DS(on)
V
V
V
DS
DS
DS
FOR TEST CIRCUIT
SEE FIGURE
= 80V
= 50V
= 20V
100
www.irf.com
80
10us
100us
1ms
10ms
100
13
1000
120