IRFB59N10DPBF International Rectifier, IRFB59N10DPBF Datasheet - Page 7

• Manufacturer Part Number: IRFB59N10DPBF
• Description: MOSFET N-CH 100V 59A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB59N10DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 35.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 59A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 114nC @ 10V
• Input Capacitance (ciss) @ Vds: 2450pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 59 A
• Gate Charge, Total: 76 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 0.025 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 20 ns
• Time, Turn-on Delay: 16 ns
• Transconductance, Forward: 18 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±30 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 59 A
• Mounting Style: Through Hole
• Gate Charge Qg: 76 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB59N10DPBF

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Re-Applied
Voltage
Reverse
Recovery
Current
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‚
+
-
D.U.T
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Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 14. For N-Channel HEXFET
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
ƒ
•
•
•
•
Diode Recovery
Current
IRFB/IRFS/IRFSL59N10DPbF
dv/dt
Forward Drop
•
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di/dt
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D =
-
Power MOSFETs
Period
„
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
*
7