STW20NK50Z STMicroelectronics, STW20NK50Z Datasheet - Page 2
![MOSFET N-CH 500V 17A TO-247](/photos/5/30/53058/to-247_sml.jpg)
STW20NK50Z
Manufacturer Part Number
STW20NK50Z
Description
MOSFET N-CH 500V 17A TO-247
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Specifications of STW20NK50Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
119nC @ 10V
Input Capacitance (ciss) @ Vds
2600pF @ 25V
Power - Max
190W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.27 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
17 A
Power Dissipation
190000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Current, Drain
17 A
Gate Charge, Total
85 nC
Package Type
TO-247
Polarization
N-Channel
Resistance, Drain To Source On
0.23 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
70 ns
Time, Turn-on Delay
28 ns
Transconductance, Forward
13 S
Voltage, Breakdown, Drain To Source
500 V
Voltage, Forward, Diode
1.6 V
Voltage, Gate To Source
±30 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3261-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STW20NK50Z
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STW20NK50Z,STW11NK100Z,20NK50Z,W11NK100Z,
Manufacturer:
ST
0
STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) I
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/13
V
Rthj-case
Rthj-amb
Symbol
Symbol
Symbol
dv/dt (1)
SD
BV
ESD(G-S)
I
V
DM
P
V
V
E
T
I
DGR
TOT
I
I
AR
T
T
stg
DS
GS
AS
GSO
D
D
17A, di/dt 200A/µs, V
j
l
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Gate-Source Breakdown
Voltage
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate source ESD(HBM-C=100 pF, R=1.5 K
Peak Diode Recovery voltage slope
Operating Junction Temperature
Storage Temperature
Parameter
j
DD
= 25 °C, I
V
(BR)DSS
Parameter
D
C
GS
= I
= 25°C
, T
GS
j
= 20 k )
max)
AR
j
Parameter
= 0)
T
, V
JMAX.
DD
C
C
Igs=± 1mA (Open Drain)
= 25°C
= 100°C
= 50 V)
Test Conditions
TO-220/D2PAK
62.5
Min.
30
-55 to 150
Value
10.71
6000
± 30
1.51
0.66
500
500
190
300
4.5
17
68
Max Value
850
Typ.
17
TO-247
50
Max.
W/°C
°C/W
°C/W
Unit
Unit
Unit
V/ns
mJ
°C
°C
A
V
W
V
V
V
A
A
A
V