STW20NK50Z STMicroelectronics, STW20NK50Z Datasheet - Page 3
![MOSFET N-CH 500V 17A TO-247](/photos/5/30/53058/to-247_sml.jpg)
STW20NK50Z
Manufacturer Part Number
STW20NK50Z
Description
MOSFET N-CH 500V 17A TO-247
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Specifications of STW20NK50Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
119nC @ 10V
Input Capacitance (ciss) @ Vds
2600pF @ 25V
Power - Max
190W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.27 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
17 A
Power Dissipation
190000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Current, Drain
17 A
Gate Charge, Total
85 nC
Package Type
TO-247
Polarization
N-Channel
Resistance, Drain To Source On
0.23 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
70 ns
Time, Turn-on Delay
28 ns
Transconductance, Forward
13 S
Voltage, Breakdown, Drain To Source
500 V
Voltage, Forward, Diode
1.6 V
Voltage, Gate To Source
±30 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3261-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STW20NK50Z
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STW20NK50Z,STW11NK100Z,20NK50Z,W11NK100Z,
Manufacturer:
ST
0
STx20NK50Z
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
V
Symbol
Symbol
R
dv/dt
R
ESD(G-S)
I
SD
DM
P
V
thj-case
thj-amb
V
V
T
I
I
TOT
T
T
ISO
GS
DS
stg
D
D
l
j
(2)
≤ 17 A, di/dt ≤ 200 A/µs, V
(3)
Absolute maximum ratings
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-ambient
max
Maximum lead temperature for
soldering purpose
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; T
Gate source ESD (HBM-C=100 pF,
R=1.5 kΩ)
Peak diode recovery voltage slope
Storage temperature
Max operating junction temperature
C
= 25 °C)
Parameter
Parameter
DD
Doc ID 9118 Rev 9
C
= 25 °C
≤ V
GS
(BR)DSS
= 0)
C
C
= 25 °C
= 100 °C
, T
j
≤ T
JMAX.
TO-220,
D²PAK
TO-220, TO-247,
62.5
D²PAK
0.66
10.71
190
17
68
--
-55 to 150
Value
300
TO-247 TO-220FP
Value
6000
± 30
1.51
500
150
4.5
50
TO-220FP
Electrical ratings
10.71
2500
17
68
40
62.5
(1)
3.1
W/°C
Unit
V/ns
°C/W
°C/W
Unit
°C
°C
W
V
V
A
A
A
V
°C
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