IRFB260NPBF International Rectifier, IRFB260NPBF Datasheet

MOSFET N-CH 200V 56A TO-220AB

IRFB260NPBF

Manufacturer Part Number
IRFB260NPBF
Description
MOSFET N-CH 200V 56A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRFB260NPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
40 mOhm @ 34A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
56A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
220nC @ 10V
Input Capacitance (ciss) @ Vds
4220pF @ 25V
Power - Max
380W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Channel Type
N
Current, Drain
56 A
Gate Charge, Total
150 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
380 W
Resistance, Drain To Source On
0.04 Ohm
Resistance, Thermal, Junction To Case
0.4 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
52 ns
Time, Turn-on Delay
17 ns
Transconductance, Forward
29 S
Voltage, Breakdown, Drain To Source
200 V
Voltage, Drain To Source
200 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
56 A
Mounting Style
Through Hole
Gate Charge Qg
150 nC
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.04Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFB260NPBF
l
l
l
l
l
www.irf.com
Applications
Absolute Maximum Ratings
Thermal Resistance
Notes 
Benefits
I
I
I
P
V
dv/dt
T
T
R
R
R
D
D
DM
J
STG
D
GS
θJC
θCS
θJA
@ T
@ T
High frequency DC-DC converters
Lead-Free
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective C
Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
@T
C
C
C
= 25°C
= 100°C
= 25°C
through … are on page 8
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
IRFB260NPbF
V
200V
DSS
OSS
300 (1.6mm from case )
Typ.
0.50
–––
–––
HEXFET
10 lbf•in (1.1N•m)
to
-55 to + 175
R
Max.
220
380
± 20
2.5
DS(on)
56
40
10
0.040Ω
®
Power MOSFET
Max.
max
0.40
–––
62
TO-220AB
PD - 95473
Units
Units
W/°C
°C/W
V/ns
56A
°C
W
I
A
V
D
1

Related parts for IRFB260NPBF

IRFB260NPBF Summary of contents

Page 1

... Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA Notes  through … are on page 8 www.irf.com SMPS MOSFET IRFB260NPbF HEXFET V DSS 200V OSS @ 10V GS @ 10V GS 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.50 – ...

Page 2

... IRFB260NPbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

Page 3

... Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.00 100. 25°C 10. 15V 20µs PULSE WIDTH 1.00 3.0 5.0 7.0 9 Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com IRFB260NPbF 1000 TOP 100 BOTTOM 4.5V 10 4.5V 1 0.1 10 100 0.1 Fig 2. Typical Output Characteristics 3 3 175°C 2 ...

Page 4

... IRFB260NPbF 100000 0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000.00 100. 175°C 10. 25°C 1.00 0.10 0.0 0.5 1 Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 1000 0 Fig 6. Typical Gate Charge Vs. ...

Page 5

... D = 0.50 0.1 0.20 0.10 0.05 SINGLE PULSE 0.02 (THERMAL RESPONSE) 0.01 0.01 0.001 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRFB260NPbF Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms 0.001 ...

Page 6

... IRFB260NPbF D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 850 15V DRIVER 680 + V DD 510 - A 340 170 Starting T , Junction Temperature Fig 12c. Maximum Avalanche Energy Fig 13b. Gate Charge Test Circuit ...

Page 7

... D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 14. For N-Channel HEXFET www.irf.com IRFB260NPbF + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt ...

Page 8

... IRFB260NPbF 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH E XAMPLE : 1010 L OT CODE 1789 19, 1997 LINE "C" Note: "P" in assembly line position indicates " ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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