IRFB260NPBF International Rectifier, IRFB260NPBF Datasheet - Page 2

• Manufacturer Part Number: IRFB260NPBF
• Description: MOSFET N-CH 200V 56A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFB260NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 34A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 56A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 220nC @ 10V
• Input Capacitance (ciss) @ Vds: 4220pF @ 25V
• Power - Max: 380W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Current, Drain: 56 A
• Gate Charge, Total: 150 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 380 W
• Resistance, Drain To Source On: 0.04 Ohm
• Resistance, Thermal, Junction To Case: 0.4 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 52 ns
• Time, Turn-on Delay: 17 ns
• Transconductance, Forward: 29 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 56 A
• Mounting Style: Through Hole
• Gate Charge Qg: 150 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.04Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB260NPBF

IRFB260NPbF
Dynamic @ T
Diode Characteristics
Static @ T
Avalanche Characteristics
I
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
E
I
E
I
I
I
V
t
Q
t
GSS
DSS
d(on)
d(off)
SM
r
f
AR
S
rr
on
2
fs
DS(on)
(BR)DSS
GS(th)
iss
oss
rss
oss
oss
oss
AS
AR
SD
g
gs
gd
rr
(BR)DSS
eff.
/∆T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Parameter
Parameter
Parameter
Parameter
–––
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
Min. Typ. Max. Units
29
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
4220 –––
5080 –––
0.26 –––
–––
–––
–––
–––
–––
––– -100
–––
150
580
140
230
500
––– 0.040
–––
–––
–––
240
2.1
24
67
17
64
52
50
220
–––
250
100
–––
220
100
–––
–––
–––
–––
–––
–––
–––
–––
360
4.0
1.3
3.2
25
37
56
V/°C
µA
nA
nC
ns
pF
µC
ns
Ω
S
V
V
V
Typ.
–––
–––
–––
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
Reference to 25°C, I
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
J
J
G
= 34A
= 34A
= 25°C, I
= 25°C, I
= 1.8Ω
= 0V, I
= 10V, I
= V
= 200V, V
= 160V, V
= 20V
= -20V
= 50V, I
= 160V
= 10V „
= 100V
= 10V „
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 34A
= 34A, V
= 250µA
= 34A
= 34A
GS
GS
= 0V to 160V …
Max.
= 1.0V, ƒ = 1.0MHz
= 160V, ƒ = 1.0MHz
450
34
38
= 0V
= 0V, T
www.irf.com
D
GS
= 1mA
„
J
= 0V „
G
= 150°C
Units
S
+L
mJ
mJ
A
D
S
D
)