IRFB260NPBF International Rectifier, IRFB260NPBF Datasheet - Page 3

• Manufacturer Part Number: IRFB260NPBF
• Description: MOSFET N-CH 200V 56A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFB260NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 34A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 56A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 220nC @ 10V
• Input Capacitance (ciss) @ Vds: 4220pF @ 25V
• Power - Max: 380W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Current, Drain: 56 A
• Gate Charge, Total: 150 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 380 W
• Resistance, Drain To Source On: 0.04 Ohm
• Resistance, Thermal, Junction To Case: 0.4 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 52 ns
• Time, Turn-on Delay: 17 ns
• Transconductance, Forward: 29 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 56 A
• Mounting Style: Through Hole
• Gate Charge Qg: 150 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.04Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB260NPBF

www.irf.com
1000.00
100.00
10.00
Fig 3. Typical Transfer Characteristics
1000
1.00
Fig 1. Typical Output Characteristics
100
0.1
10
1
3.0
0.1
TOP
BOTTOM 4.5V
5.0
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
VGS
T J = 25°C
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
7.0
1
20µs PULSE WIDTH
Tj = 25°C
9.0
V DS = 15V
20µs PULSE WIDTH
4.5V
11.0
10
T J = 175°C
13.0
15.0
100
1000
100
0.1
Fig 2. Typical Output Characteristics
10
1
Fig 4. Normalized On-Resistance
0.1
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
TOP
BOTTOM 4.5V
-60
I
D
IRFB260NPbF
-40
=
V DS , Drain-to-Source Voltage (V)
56A
VGS
-20
15V
T , Junction Temperature
Vs. Temperature
10V
8.0V
7.0V
6.0V
5.5V
5.0V
J
0
1
20
40
20µs PULSE WIDTH
Tj = 175°C
60
80
10
100 120 140 160 180
4.5V
( C)
V
°
GS
=
10V
3
100